Power schottky device barrier method
A device and power technology, applied in the barrier field of power Schottky devices, can solve the problem of poor reverse withstand voltage and anti-burnout ability of devices, barrier junction failure, and poor adhesion To achieve the effect of improving the reverse withstand voltage and reverse characteristics, avoiding surface defects and contamination, and reducing the influence of surface states
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[0032] Accompanying drawing is a kind of specific embodiment of the present invention.
[0033] The barrier method of the power Schottky device of the present invention comprises the following steps: oxidation→first photolithography→boron diffusion→secondary photolithography→sputtering barrier metal→evaporating multi-layer metal on the front side→three photolithography→annealing→back reduction Thin → back evaporation → alloy → intermediate test and scribing and slicing
[0034] Power Schottky device potential barrier method of the present invention utilizes metal silicide MoSi 2 —Silicon contact replaces the traditional metal-semiconductor contact, which not only avoids surface defects and contamination, but also reduces the influence of surface states, thereby improving the forward characteristics, reverse withstand voltage and anti-burnout capabilities of the device. When choosing a barrier metal, the stability and reliability of the contact must be considered. Considering ...
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