Fin field effect transistor and method of forming the same
A fin field effect and transistor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low saturation current and low mobility of PMOS transistors, and improve hole carrier mobility. , high mobility, and the effect of improving performance
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[0033] As mentioned in the background art, the performance of the P-type fin field effect transistor formed in the prior art needs to be further improved.
[0034] Studies have found that the migration rate of hole carriers in germanium or germanium-silicon materials in P-type fin field effect transistors is greater than that in silicon, and using germanium or germanium-silicon materials as fin materials can improve the performance of P-type fin field effect transistors. The hole mobility of the P-type fin field effect transistor, thereby improving the performance of the P-type fin field effect transistor. In one embodiment, a germanium layer or a silicon germanium layer may be formed by epitaxy on a substrate, and then the germanium layer or silicon germanium layer may be etched to serve as the channel region of the P-type fin field effect transistor. However, the yield of the single-crystal germanium layer formed by the epitaxial process is low and the cost is high, and ther...
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