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Thermomagnetic treatment device and method for magneto-resistive elements of spin valves

A technology of magnetoresistive elements and processing devices, applied in heat treatment furnaces, heat treatment equipment, furnaces, etc., can solve problems such as inability to produce, and achieve the effects of reducing discreteness, improving stability and sensitivity, and eliminating lattice defects

Inactive Publication Date: 2013-02-27
710TH RES INST OF CHINA SHIPBUILDING IND CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In foreign countries, superconducting equipment generates a strong magnetic field greater than 8T to process spin valve magnetoresistive elements, but this equipment cannot be produced in China

Method used

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  • Thermomagnetic treatment device and method for magneto-resistive elements of spin valves
  • Thermomagnetic treatment device and method for magneto-resistive elements of spin valves
  • Thermomagnetic treatment device and method for magneto-resistive elements of spin valves

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Embodiment

[0034] Such as figure 1 A thermomagnetic treatment device for a spin valve magnetoresistive element is shown, the device includes a guide 2, a heater 3, a "D" shaped soft magnet 4, a ring magnetic field coil 5 and a collector 6;

[0035] The guide 2 is a tubular structure, and a guide groove 13 for the spin valve magneto-resistive element 12 to pass through is opened in the middle of the guide 2 along the axial direction. The two ends of the guide groove 13 are respectively an inlet end and an outlet end. The guide slot 13 can be selected with different cross-sectional dimensions, so as to be suitable for the passage of the components 12 packaged in SOP8, STO-23, and TO-94 respectively; Into the push rod mechanism 7 in the guide vane groove 13; in front of the push rod mechanism 7, the position above the guide vane groove 13 is provided with a preheating zone air inlet 1; on the vertical direction of the guide vane groove 13 outlet end, two The cooling air inlet 11, the air i...

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Abstract

The invention relates to a thermomagnetic treatment device and method for magneto-resistive elements of spin valves. The thermomagnetic treatment device comprises an element guiding device, a heater, a D-shaped soft magnet, an annular magnetic field coil and a collector. The method comprises the following steps that: the magneto-resistive elements of the spin valves are pushed into a preheating region and then sequentially passes through a high-temperature heating region and a high-temperature stabilizing region to be heated; then the elements enter a horizontal clearance in the middle part of the straight flange of the D-shaped soft magnet to be subjected to low-frequency strong-magnetism processing; and along with the continuous pushing of the elements, the processed elements continuously slip into the element collector. According to the method, the lattice imperfection of a shielding material layer of each magneto-resistive element can be eliminated, and the discrete region, which corresponds to the original point of a coordinate system of output of a magnetic field, of the geometric center of a magnetic-lag region as well as the discreteness of differential permeability is reduced, and thus the stability and sensitivity of the elements are improved.

Description

technical field [0001] The invention relates to a thermomagnetic treatment device and method for a spin valve magnetoresistive element. Background technique [0002] The spin-valve magneto-resistive element has a small weak magnetic field measurement field, high sensitivity, high frequency response characteristics, small size, light weight, and has a wide application space in military, industrial, civil and other fields. During the preparation process of the spin valve magnetoresistive element, the shielding material layer is prepared by performing magnetron sputtering on the wafer, and the shielding material layer is a soft magnetic material with a thickness of more than ten nanometers. During the magnetron sputtering process, the shielding material layer has various defects such as uneven thickness, slightly convex, and slightly concave, as well as the electromagnetic stress between the multilayer films, resulting in a large hysteresis region. Especially under low-frequen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C21D1/00C21D9/00
Inventor 佘以军黄春奎
Owner 710TH RES INST OF CHINA SHIPBUILDING IND CORP
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