Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming solder pad of semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device pad formation, can solve the problems of limited production capacity and long processing time of organic solvents, and achieve the effects of increasing production capacity, preventing electrochemical erosion, and reducing processing time

Inactive Publication Date: 2008-04-02
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Using the above method, although the lattice defects on the surface of the pad are removed during the process of forming the pad, the required organic solvent treatment time is too long, which limits the increase in production capacity. Therefore, how to apply it in the process of pad formation The organic solvent removal method removes the lattice defects on the pad surface while reducing the processing time has become the main problem faced by those skilled in the art at this stage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming solder pad of semiconductor device
  • Method for forming solder pad of semiconductor device
  • Method for forming solder pad of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.

[0029] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A bonding pad forming method for semiconductor device comprises that: a current conducting layer is formed on a substrate of a semiconductor device; a bonding pad graph is etched on the current conducting layer; lattice defect detection is executed to the surface of the current conducting layer; diluted sulfur peroxide is utilized to process the lattice defects of the current conducting layer surface to form a bonding pad. The use of diluted sulfur peroxide which is a water-containing solution can remove the lattice defects of the bonding pad surface and simultaneously reduce the processing time of organic solvents, so as to improve productivity.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming pads of semiconductor devices. Background technique [0002] As a receiving component that forms a connection between a semiconductor device and other semiconductor devices or electronic components to form an electronic circuit module, the pad is required to have good conductivity and high reliability, and plays an important role in the internal structure of the semiconductor device. Optimizing the manufacturing process has always been the goal pursued by device structure engineers. [0003] Fig. 1 is a schematic diagram illustrating the method for forming a semiconductor device surface pad in the prior art. As shown in Fig. 1, in actual production, the common pad formation process of a semiconductor device includes: forming a conductive layer on the device substrate; Coating a photoresist layer on the layer; etching the conductive layer ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/60H01L21/28H01L21/66H01L21/321
Inventor 宋铭峰裴昌炜张水友
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products