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Method for removing lattice defect in pad area of semiconductor device

A lattice defect and pad area technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, etc., can solve not particularly reliable, pad area lattice defects, DRAM reliability effects And other issues

Inactive Publication Date: 2006-01-25
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Description
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Problems solved by technology

However, this method of limiting the interval time (Q time) between the aluminum alloy passivation layer forming step (step 6) and the polyimide protective layer forming step (step 7) is not particularly reliable, once the Q time is exceeded , lattice defects will be generated in the pad area
Moreover, lattice defects were found in the pad area even after the polyimide protective layer was formed
These defects can negatively affect the reliability of DRAM

Method used

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  • Method for removing lattice defect in pad area of semiconductor device
  • Method for removing lattice defect in pad area of semiconductor device
  • Method for removing lattice defect in pad area of semiconductor device

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specific Embodiment

[0014] see below figure 2 A method for removing lattice defects in a pad (PAD) region of a semiconductor device using an argon (Ar) plasma sputtering repair process according to the present invention will be described in detail. figure 2 It is a flow chart of the bonding pad formation process of the semiconductor device according to the present invention.

[0015] exist figure 2 The pad formation process flow of the semiconductor device according to the present invention is shown in figure 1 After the step 7 (forming the polyimide protective layer) of the shown bonding pad formation process flow of the existing semiconductor device, an increase is made: step S1, whether there is a lattice defect in the detection pad region; and step S2, when the step When S1 detects that there is a lattice defect in the pad region, argon (Ar) plasma sputtering repair treatment is performed. In step S1, use an optical microscope (OM) to detect whether there is a lattice defect in the pad ...

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Abstract

This invention discloses a method for removing lattice defect in the pad zone of a semiconductor device with Ar plasma sputter reparation which forms a polyimide protection layer then tests if lattice defect exists in the pad zone, if so, the Ar plasma sputter is made to repair and remove the lattice defect.

Description

technical field [0001] The present invention relates to the method for removing the lattice defect in the bonding pad (PAD) region of semiconductor device, relate in particular to using argon (Ar) plasma sputtering to repair and remove the lattice defect in the bonding pad (PAD) region of semiconductor device The method, particularly relates to the method for removing lattice defects in the pad (PAD) region of dynamic random access memory (hereinafter referred to as DRAM) by argon (Ar) plasma sputtering repair treatment. Background technique [0002] Semiconductor devices include various types of active devices. For example, dynamic random access memory (DRAM) is a semiconductor device with a multi-layer structure. In order to connect components formed in various film layers together to form a complete DRAM, and the required electronic circuit modules are formed by connecting DRAM with other semiconductor devices or other electronic components. To complete these connections,...

Claims

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Application Information

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IPC IPC(8): H01L21/44H01L21/28H01L21/768H01L21/60H01L21/321H01L21/66
Inventor 吴长明蒋晓钧徐立郭文彬
Owner SEMICON MFG INT (SHANGHAI) CORP
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