Manufacturing method of semiconductor

Abstract

This invention puts forward a manufacturing method for semiconductor devices, especially DRAM, which adds an attached soft corrosion process to the source trap insulation layer after being corroded and takes a mixed gas of CE4 / O2 as the corroding gas under the microwave state with the frequency of 2.45GHz to eliminate the lattice defect caused by the harm of plasmas on a silicon substrate surface by the chemical reaction of corroding gas on the silicon substrate surface so as to ensure to constitute DRAM products with qualified electric property.

Description

technical field [0001] The manufacturing method of the semiconductor device that the present invention relates to especially relates to the method of adding soft etching after etching the source isolation layer of dynamic random access memory (hereinafter referred to as DRAM) to remove plasma damage and improve refresh time. Background technique [0002] With the increasing integration of integrated circuits and the continuous improvement of integrated circuit manufacturing technology, the patterning line width of integrated circuits has become smaller and smaller. The influence of continuity is also increasing, so the influence on the electrical properties of semiconductor devices is becoming more and more obvious. In particular, lattice defects caused by plasma damage on the surface of the silicon substrate are increasingly damaging the electrical properties of DRAM products, and may even lead to failure of the entire DRAM product or the entire integrated circuit. [0003...

AI Technical Summary

Problems solved by technology

[0004] The electrical insulating isolation layer set between adjacent source regions is usually etched on a Lam Exelan machine. Due to the characteristics of the Exelan dual-frequency plasma source used, the plasma damages the surface of the Si substrate, resulting in source region insulation. The pass rate of DARM products of the isolation layer is reduced

Images