Forming method of PMOS (P-channel metal oxide semiconductor) transistor
A transistor and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low mobility and low saturation current of PMOS transistors, and achieve enhanced mobility, increased mobility, and lattice structure. full effect
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[0034] As mentioned in the background art, the performance of the PMOS transistors formed in the prior art needs to be further improved.
[0035] Studies have found that the mobility of carrier holes in PMOS transistors in silicon germanium is greater than that in silicon. Using silicon germanium materials as the channel material of transistors can improve the hole mobility of PMOS transistors, thereby improving the mobility of PMOS transistors. the saturation current. In one embodiment, a silicon germanium layer may be formed by epitaxy on the substrate, and then the silicon germanium layer may be etched to serve as a channel region of the PMOS transistor. However, the silicon germanium layer formed by the epitaxial process has low yield and high cost, and the silicon germanium layer formed by the epitaxial process has many defects, which will reduce the quality of the channel region of the formed transistor. affect the performance of transistors.
[0036] In one embodiment...
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