Reverse-polarity algainp-based LEDs with ITO-covered surfaces and manufacturing methods thereof
A technology of surface covering and manufacturing method, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as affecting the electrical contact between indium tin oxide and n-type semiconductor layer, damage to the MQW active layer, and difficulty in epitaxial growth, etc. Current spreading uniformity, improving light extraction efficiency, eliminating the effect of light absorption
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[0035] One, such as figure 1 with 2 Shown is the structural representation of the preferred example of the present invention in the manufacturing process, and the manufacturing steps are as follows:
[0036] 1. If figure 1 As shown, an epitaxial layer is grown on a GaAs temporary substrate 101 by MOCVD equipment, and the epitaxial layer includes a GaAs buffer layer 102, a GaInP cut-off layer 103, an n-GaAs ohmic contact layer 104, an n-AlGaInP confinement layer 105, and an MQW multi-quantum well. Source layer 106 , p-AlGaInP confinement layer 107 , p-GaP window layer 108 .
[0037] Wherein the n-GaAs ohmic contact layer 104 preferably has a thickness of 20nm to 100nm, and a doping concentration of 1×10 19 cm -3 Above, the doping element is Si, so as to form a good ohmic contact with the ohmic contact point 204 .
[0038] The preferred thickness of the p-GaP window layer 108 is 600nm to 8000nm, and the doping concentration is 1×10 18 cm -3 Above, the doping element is Mg...
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