Epitaxial material for N-face light emergence AlGaInP LED thin film chips and preparation method of epitaxial material

A technology of thin-film chips and epitaxial materials, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low electro-optical conversion efficiency, achieve the effects of eliminating light absorption, improving adhesion, and simplifying the preparation process

Active Publication Date: 2019-02-19
NANCHANG UNIV +1
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Problems solved by technology

However, the epitaxial material grown directly on the GaAs substrate has two major disadvantages of substrate absorption and total reflection loss by preparing N electrodes on the substrate side and P electrodes on the upper surface, and the electro-optical conversion efficiency is very low, generally less than 10. %

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  • Epitaxial material for N-face light emergence AlGaInP LED thin film chips and preparation method of epitaxial material
  • Epitaxial material for N-face light emergence AlGaInP LED thin film chips and preparation method of epitaxial material

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Embodiment Construction

[0026] Below in conjunction with accompanying drawing, the present invention will be further described.

[0027] figure 2It is a schematic structural diagram of an epitaxial material for an N-surface light-emitting AlGaInP LED thin film chip of the present invention. According to the sequence of epitaxial growth, it includes an N-type GaAs substrate 200, an N-type GaAs buffer layer 201, and a first etch layer from bottom to top. Barrier layer 202, second corrosion barrier layer 203, first N-type roughened layer 204A, second N-type roughened layer 204B, N-type confinement layer 205, N-side space layer 206, multiple quantum well light-emitting region 207, P-side The space layer 208 , the P-type confinement layer 209 , the P-type current spreading layer 210 and the P-type ohmic contact layer 211 .

[0028] The (Al x1 Ga 1-x1 ) y1 In 1-y1 1P material with a forbidden band width than that used in the quantum wells of the multi-quantum well light-emitting region 207 (Al x5 Ga...

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Abstract

The invention discloses an epitaxial material for N-face light emergence AlGaInP LED thin film chips and a preparation method of the epitaxial material. The epitaxial material comprises an N-type GaAssubstrate, an N-type GaAs buffer layer, a first corrosive barrier layer, a second corrosive barrier layer, a first N-type roughened layer, a second N-type roughened layer, an N-type limiting layer, an N-side space layer, a multiple quantum well illuminant area, a P-side space layer, a P-type limiting layer, a P-type current expanding layer and a P-type ohmic contact layer. The invention further discloses a preparation method of the epitaxial material for the N-face light emergence AlGaInP LED thin film chips. An N electrode can be directly prepared on the first N-type roughened layer, the problem of light absorption of the ohmic contact layer is eliminated, adhesion of the N electrode can be improved, a preparation process of the N-face light emergence AlGaInP LED thin film chips is simplified, and the chip index is effectively increased while cost reduction is realized.

Description

technical field [0001] The invention belongs to the field of semiconductor light-emitting devices, and in particular relates to an epitaxial material for AlGaInP LED thin-film chips used for emitting light from an N surface and a preparation method thereof. Background technique [0002] Semiconductor light-emitting diodes (Light-Emitting Diodes, LEDs) have been widely used in many fields, and are recognized as a next-generation green lighting source. The AlGaInP material lattice-matched with the GaAs substrate can cover visible light wavelengths from 560nm to 650nm, and is an excellent material for preparing red to yellow-green LEDs. AlGaInP light-emitting diodes have important applications in the field of solid-state lighting and display, such as full-color screen displays, automotive lights, backlights, traffic lights, and daily lighting. [0003] In recent years, people have made great progress in the growth technology of AlGaInP light-emitting diode epitaxial materials,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/30H01L33/00
CPCH01L33/0062H01L33/22H01L33/30Y02P70/50
Inventor 李树强江风益刘军林王光绪陈芳郭醒
Owner NANCHANG UNIV
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