Check patentability & draft patents in minutes with Patsnap Eureka AI!

Embedded flash memory and sector processing method and device thereof

A processing method and technology of a processing device, which are used in electrical digital data processing, memory systems, memory address/allocation/relocation, etc., to reduce sector processing time, improve storage utilization, and reduce logic complexity and processing procedures. the effect of difficulty

Inactive Publication Date: 2016-07-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The problem solved by the present invention is how to reduce the logic complexity of sector processing and the difficulty of processing procedures, and reduce the processing time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Embedded flash memory and sector processing method and device thereof
  • Embedded flash memory and sector processing method and device thereof
  • Embedded flash memory and sector processing method and device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] At present, for embedded flash memory products, the main area of ​​each flash memory needs to be accompanied by N additional patch sectors, and in order to ensure that the data of the N patch sectors is correct, it is necessary to do a separate read for the N patch sectors. , writing, erasing and test mode test screening inspection, the test coverage needs to be consistent with the requirements of the main area. When testing embedded flash memory products, if a sector in the main area is found to be a bad sector, it is necessary to find the patch sector corresponding to the bad sector through the mapping relationship between the bad sector and the patch sector. area, and then use the corresponding patch sector to repair the bad sector. Wherein, the number N of patch sectors increases as the capacity of the flash memory increases.

[0024] In this case, if the above-mentioned method is used to process the bad sectors of the embedded flash memory, the logical complexity ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an embedded flash memory and a sector processing method and device thereof. The embedded flash memory mainly comprises a main region and an NVR region, wherein the main region includes M sectors. The method comprises the following steps: detecting whether a bad sector exists in the main region or not; acquiring and recording an address of the bad sector if the bad sector exists in the main region; and readdressing the embedded flash memory and partitioning the readdressed embedded flash memory, wherein the bad sector is ignored in an addressing process. Through adoption of the embedded flash memory and the sector processing method and device thereof, the logical complexity of sector processing and the program processing difficulty can be lowered, and the processing duration is shortened.

Description

technical field [0001] The invention relates to the testing field of flash memory, in particular to an embedded flash memory and its sector processing method and device. Background technique [0002] At present, for embedded flash memory products, the main area of ​​each flash memory needs to be accompanied by N additional patch sectors, and in order to ensure that the data of the N patch sectors is correct, it is necessary to do a separate read for the N patch sectors. , writing, erasing and test mode test screening inspection, the test coverage needs to be consistent with the requirements of the main area. When testing embedded flash memory products, if a sector in the main area is found to be a bad sector, it is necessary to find the patch sector corresponding to the bad sector through the mapping relationship between the bad sector and the patch sector. area, and then use the corresponding patch sector to repair the bad sector. Wherein, the number N of patch sectors in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F12/02
CPCG06F12/0246
Inventor 任栋梁钱亮
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com