Optical modulator that includes optical waveguide formed in ferroelectric substrate
A technology of optical modulator and optical waveguide, which is applied in the fields of instruments, optics, nonlinear optics, etc., and can solve the problems of quality degradation of modulated optical signals, etc.
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no. 1 approach
[0054] Figure 7 The configuration of the light modulator according to the first embodiment is illustrated. According to the optical modulator 100 of the first embodiment, by following the Figure 5 The illustrated light modulator is constructed in the same manner including the substrate 1 . In the substrate 1, an input optical waveguide 2a, a pair of straight optical waveguides 2b and 2c, and an output optical waveguide 2d are formed. That is, an optical waveguide constituting a Mach-Zehnder interferometer is formed near the top surface of substrate 1 . in accordance with Image 6 In the same manner as in the illustrated configuration, buffer layer 5 and semiconductive film 7 are formed on the top surface of substrate 1 . Signal electrodes 3 x and 3 y , ground electrodes 4 , and DC electrodes 6 a and 6 b are formed on semiconductive film 7 . Note that the light modulator 100 includes a DC electrode 6e and a DC electrode 6f instead of Figure 5 The illustrated DC electro...
no. 2 approach
[0066] Figure 10 The configuration of the light modulator according to the second embodiment is illustrated. The configuration of the light modulator 200 according to the second embodiment is the same as Figure 5 with Image 6 The configurations of the illustrated light modulators are almost the same. However, the resistance of the semiconductive film 31 of the light modulator 200 is lower than Image 6 The resistance of the semiconductive film 7 is illustrated. For example, semiconductive film 31 is formed such that the resistance value between DC electrode 6 a and DC electrode 6 d and the resistance value between DC electrode 6 b and DC electrode 6 c are less than or equal to 1 megohm. In addition, the semiconductive film 31 is realized by, for example, a Si film whose resistivity is adjusted.
[0067] When the resistance of the semiconductive film 31 is small, such as Figure 10 As illustrated, charges generated by the pyroelectric effect due to temperature change m...
no. 3 approach
[0073] Figure 12 The configuration of the light modulator according to the third embodiment is illustrated. The light modulator 300 according to the third embodiment includes a pair of light modulator elements arranged in parallel to each other. Each light modulator element generates a modulated light signal. A pair of modulated optical signals generated by the pair of optical modulator elements are combined and output. Therefore, the optical modulator 300 is capable of generating a QPSK modulated optical signal.
[0074] Near the top surface of the substrate 1, an optical waveguide for the first light modulator element and an optical waveguide for the second light modulator element are formed. The optical waveguides used for the individual optical modulator elements can be used with Figure 5 to Figure 11 The illustrated optical waveguides 2a-2d are substantially identical. In addition, a ground electrode 4 is formed on the top surface of the substrate 1 .
[0075] In ...
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