Unlock instant, AI-driven research and patent intelligence for your innovation.

Image sensor with anti-reflection layer and method of manufacturing the same

一种图像传感器、抗反射层的技术，应用在图像传感器领域，能够解决图像传感器制造工艺复杂、昂贵等问题，达到改善可靠性、降低故障率、降低制造成本的效果

Active Publication Date: 2020-02-28
SK HYNIX INC +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the image sensor manufacturing process is complex and expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor with anti-reflection layer and method of manufacturing the same
  • Image sensor with anti-reflection layer and method of manufacturing the same
  • Image sensor with anti-reflection layer and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Hereinafter, an image sensor having an anti-reflection layer and a method of manufacturing the same will be described through various examples of embodiments with reference to the accompanying drawings.

[0028] figure 1 is a plan view illustrating a pixel array region 101 provided in an image sensor according to an embodiment. see figure 1 , the pixel array area 101 is divided into an active pixel array area 111 and an optical black pixel array area 121 . The active pixel array region 111 and the optical black pixel array region 121 are adjacent to each other.

[0029] The pixel array consists of a plurality of pixels (see figure 2 and image 3 212 and 213). For example, a plurality of light sensing elements are disposed in the active pixel array area 111 and the optical black pixel array area 121 . The optical sensing element may be a phototransistor, a photodiode, a photogate, a pinned photodiode, or the like. A plurality of light sensing elements may be arra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An image sensor, comprising: a pixel layer in which an active pixel array and an optical black pixel array are formed; a first anti-reflective layer formed on the active pixel array and including a first oxide layer with high light transmittance a hafnium layer; and a second anti-reflective layer formed over the optical black pixel array and including a second hafnium oxide layer with low light transmittance.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2014-0124295 filed with the Korean Intellectual Property Office on September 18, 2014, the entire contents of which are hereby incorporated by reference. technical field [0003] Various embodiments relate generally to image sensors, and more particularly to image sensors configured by complementary metal oxide semiconductors (CMOS) and methods of fabricating the same. Background technique [0004] The image sensor senses an external image as light, converts the sensed light into an electrical signal, and transmits the electrical signal to a device that processes the digital signal. In general, there are two types of image sensors, a Charge Coupled Device (CCD) image sensor and a Complementary Metal Oxide Semiconductor (CMOS) image sensor. [0005] The CCD image sensor includes a photodiode, a CCD, and a signal detection circuit formed on a P-type ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14623H01L27/1462H01L27/14685H01L27/14627H01L27/14621
Inventor 金都焕孙贤哲罗喜途兪景东金锺采
Owner SK HYNIX INC