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Image sensor having anti-reflective layer and fabricating method thereof

An image sensor and anti-reflection layer technology, applied in the field of image sensors, can solve the problems of complex and expensive manufacturing process of image sensors, and achieve the effects of improving reliability, reducing failure rate, and reducing manufacturing costs

Active Publication Date: 2016-10-05
SK HYNIX INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the image sensor manufacturing process is complex and expensive

Method used

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  • Image sensor having anti-reflective layer and fabricating method thereof
  • Image sensor having anti-reflective layer and fabricating method thereof
  • Image sensor having anti-reflective layer and fabricating method thereof

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Embodiment Construction

[0027] Hereinafter, an image sensor having an anti-reflection layer and a method of manufacturing the same will be described through various examples of embodiments with reference to the accompanying drawings.

[0028] figure 1 is a plan view illustrating a pixel array region 101 provided in an image sensor according to an embodiment. see figure 1 , the pixel array area 101 is divided into an active pixel array area 111 and an optical black pixel array area 121 . The active pixel array region 111 and the optical black pixel array region 121 are adjacent to each other.

[0029] The pixel array consists of a plurality of pixels (see figure 2 and image 3 212 and 213). For example, a plurality of light sensing elements are disposed in the active pixel array area 111 and the optical black pixel array area 121 . The optical sensing element may be a phototransistor, a photodiode, a photogate, a pinned photodiode, or the like. A plurality of light sensing elements may be arra...

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Abstract

An image sensor includes a pixel layer in which an active pixel array and an optical black pixel array are formed; a first anti-reflective layer formed over the active pixel array, and including a hafnium oxide layer with a high transmittance; and a second anti-reflective layer formed over the optical black pixel array, and including a hafnium oxide layer with a low transmittance.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2014-0124295 filed with the Korean Intellectual Property Office on September 18, 2014, the entire contents of which are hereby incorporated by reference. technical field [0003] Various embodiments relate generally to image sensors, and more particularly to image sensors configured by complementary metal oxide semiconductors (CMOS) and methods of fabricating the same. Background technique [0004] The image sensor senses an external image as light, converts the sensed light into an electrical signal, and transmits the electrical signal to a device that processes the digital signal. In general, there are two types of image sensors, a Charge Coupled Device (CCD) image sensor and a Complementary Metal Oxide Semiconductor (CMOS) image sensor. [0005] The CCD image sensor includes a photodiode, a CCD, and a signal detection circuit formed on a P-type ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14623H01L27/1462H01L27/14685H01L27/14627H01L27/14621
Inventor 金都焕孙贤哲罗喜途兪景东金锺采
Owner SK HYNIX INC