Integrated Solar Collectors Using Epitaxial Lift Off And Cold Weld Bonded Semiconductor Solar Cells

A technology of solar cells and collectors, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as incident photon loss

Inactive Publication Date: 2016-11-09
RGT UNIV OF MICHIGAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the mirrors commonly used in such schemes utilize metals such as silver or gold, which can lead to significant loss of incident photons due to the spectral absorption of the mirrors

Method used

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  • Integrated Solar Collectors Using Epitaxial Lift Off And Cold Weld Bonded Semiconductor Solar Cells
  • Integrated Solar Collectors Using Epitaxial Lift Off And Cold Weld Bonded Semiconductor Solar Cells
  • Integrated Solar Collectors Using Epitaxial Lift Off And Cold Weld Bonded Semiconductor Solar Cells

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Experimental program
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Embodiment Construction

[0058] exist figure 1 One embodiment of the ELO process is schematically shown in . Epitaxial growth begins first with a chemically different thin "protective layer" consisting of InGaAs and Inp, a sacrificial layer of AlAs, a second set of protective layers of InP and InGaAs and finally the active photovoltaic cell layer. Next, the top epitaxial layer is coated with Au as a very thin plastic (e.g., Kapton TM , a polyimide film registered trademark by DuPont) main substrate. By pressing these two clean Au surfaces together with a pressure of only a few kilopascals, they electronically form a continuous, permanent, adhesive-free, cold-welded bond with properties that are indistinguishable from those of a single bulk Au film. difference.

[0059] Once bonded to the plastic handle, the wafer is ready for ELO. Cold solder bonding is only used in the ELO process (the epi layer is permanently attached to the foil substrate before peeling off the mother substrate for eventual re-...

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Abstract

There is disclosed ultrahigh-efficiency single- and multi-junction thin-film solar cells. This disclosure is also directed to a substrate-damage-free epitaxial lift-off (''ELO'') process that employs adhesive-free, reliable and lightweight cold-weld bonding to a substrate, such as bonding to plastic or metal foils shaped into compound parabolic metal foil concentrators. By combining low-cost solar cell production and ultrahigh- efficiency of solar intensity-concentrated thin-film solar cells on foil substrates shaped into an integrated collector, as described herein, both lower cost of the module as well as significant cost reductions in the infrastructure is achieved.

Description

[0001] Cross application of related applications [0002] This application is a divisional application of the application 201280042064.7 of the international application PCT / US2012 / 045778 entered into the Chinese national phase on July 6, 2012. This application claims the benefit of US Provisional Application No. 61 / 505,014, filed July 6, 2011, which is hereby incorporated by reference in its entirety. [0003] joint research agreement [0004] The claimed invention was made by, on behalf of, and / or in connection with, one or more of the following parties under a joint university-corporate research agreement: University of Michigan and Global Photonic Energy Corporation. The agreement was in effect at the time and before the invention was made, and research conducted within the scope of the agreement resulted in the claimed invention. technical field [0005] The present disclosure relates to ultrahigh efficiency single-junction and multi-junction thin-film solar cells. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0687H01L31/0693H01L31/0304H01L21/78
CPCH01L31/03046H01L31/0392H01L31/0687H01L31/0693H01L31/1844H01L31/1896H01L21/7813H01L31/0304H01L31/18Y02E10/544H01L31/03926Y02E10/52H01L31/0445H01L31/02327
Inventor 史蒂芬·R·福里斯特克里斯多佛·凯尔·伦肖迈克尔·斯洛特斯基
Owner RGT UNIV OF MICHIGAN
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