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A preparation method of graphene oxide/polyelectrolyte layer-by-layer self-assembled film

A layer-by-layer self-assembly, polyelectrolyte technology, applied in the direction of coating, metal material coating process, etc., to achieve the effect of improving stability, stable structure and good performance

Active Publication Date: 2019-01-08
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there has been no report on the self-assembly of graphene oxide and polyelectrolyte to prepare multilayer films.

Method used

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  • A preparation method of graphene oxide/polyelectrolyte layer-by-layer self-assembled film
  • A preparation method of graphene oxide/polyelectrolyte layer-by-layer self-assembled film
  • A preparation method of graphene oxide/polyelectrolyte layer-by-layer self-assembled film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Dissolve 0.1 g of graphene oxide in 100 mL of water, and ultrasonically disperse the solution without settling.

[0023] (2) Dissolve 0.5 mL of PDDA in 100 mL of water with a pipette gun, and stir ultrasonically to form a dilute solution of PDDA.

[0024] (3) Weigh 2.062g of PSS and dissolve in 100mL of water, and stir ultrasonically to form a dilute solution of PSS.

[0025] (4) Silicon wafer treatment: Soak monocrystalline silicon wafers in 100mL acetone solution for 15 minutes, ultrasonically clean, dry, and use ultraviolet light for 1 hour. The monocrystalline silicon wafers after irradiation are first immersed in PDDA dilute solution for 15 minutes, taken out and washed with water , Blow dry, then immerse in PSS dilute solution for the same time for 15min, wash with water and blow dry again.

[0026] (5) Layer by layer self-assembled graphene oxide: the monocrystalline silicon wafer with polyelectrolyte film assembled on the surface obtained in step 4 was imme...

Embodiment 2

[0029] Get the monolayer graphene oxide / polyelectrolyte film in embodiment 1, repeat test step (5) 2 times, 4 times, 6 times, 9 times, obtain respectively three layers, five layers, seven layers, ten layers of graphene oxide / polyelectrolyte film.

[0030] image 3 It is the tribological curve of the seven-layer graphene oxide / polyelectrolyte film, and its friction coefficient is stable at 0.13, which greatly improves the tribological performance of the film; Figure 4 It is a line diagram of the average friction coefficient of different layers of graphene oxide / polyelectrolyte films. It can be seen from the figure that the graphene oxide / polyelectrolyte film on the single crystal silicon wafer is more wear-resistant than the pure single crystal silicon wafer, and the multilayer oxidation The graphene / polyelectrolyte film has better tribological properties, and when the seventh layer is reached, the average coefficient of friction starts to stabilize at 0.13.

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Abstract

The invention relates to preparation of film friction materials, in particular to a preparation method for a graphene oxide / polyelectrolyte layer-by-layer self-assembly thin film. According to the preparation method for the graphene oxide / polyelectrolyte layer-by-layer self-assembly thin film, the multi-layer nanometer lubricated thin film is formed by layer-by-layer alternate self-assembly of an electrolyte solution and a graphene oxide solution by means of a surface electrostatic reaction on the basis of a processed monocrystalline silicon piece. The preparation method has the characteristics that the preparation process is simple, the cost is low, the friction coefficient of the prepared thin film is stabilized at about 0.13, the thin film has good friction reduction and abrasion resistance performance, and the new thought for material protection and lubrication in micro-machines is can be hopefully developed.

Description

technical field [0001] The invention relates to the preparation of thin-film friction materials, in particular, a method for preparing graphene oxide / polyelectrolyte layer-by-layer self-assembled thin films. Background technique [0002] Micro-electro-mechanical systems (MEMS), which emerged in the middle and late 1980s, have the characteristics of small size, light weight, low energy consumption, high degree of integration and intelligence. Micromechanical system (MEMS) system is a cutting-edge technology that combines microelectronics technology and micromachining technology. It can integrate mechanical components, electronic control systems and optical systems to obtain micromechanical components with excellent performance system, showing great potential for development in many modern technological fields. However, after the miniaturization of the structure size, the gap between the MEMS components is often at the nanometer level or even zero gap, and the friction and we...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C26/00
CPCC23C26/00
Inventor εˆ˜θΆ…ε”εŽ
Owner JIANGSU UNIV