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Circuit for initializing resistive memory and resistive memory

A resistive variable memory and initialization technology, applied in the field of circuits and resistive variable memory, can solve problems such as increasing the complexity of chip design, and achieve the effects of shortening the design cycle, saving chip area, and saving costs

Active Publication Date: 2019-01-08
合肥中科微电子创新中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The initialization voltage generated by the circuit used to initialize the RRAM is a high voltage relative to the entire RRAM, and the design of the boost circuit increases the complexity of the chip design

Method used

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  • Circuit for initializing resistive memory and resistive memory
  • Circuit for initializing resistive memory and resistive memory

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Embodiment Construction

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] An embodiment of the present invention provides a circuit for initializing a resistive memory, such as figure 1 As shown, the circuit includes: a first transmission gate 11, a second transmission gate 12, a first NOT gate 13, a second NOT gate 14 and a current limiting tube 15, wherein,

[0025] The C terminal of the first transmissio...

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Abstract

The invention provides a circuit for initializing a resistive random access memory and a resistive random access memory. The circuit comprises a first transmission gate, a second transmission gate, a first NOT gate, a second NOT gate and a current limiting tube, wherein the first transmission gate and the second transmission gate respectively realize the opening and closing of a normal write drive circuit and an external high-voltage signal input access, the first NOT gate is used for flipping an enabling signal of the first transmission gate, the second NOT gate is used for flipping an enabling signal of the second transmission gate, and the current limiting tube is used for limiting current on the external high-voltage signal input access. By adopting the circuit for initializing the resistive random access memory, the complexity of a chip design can be reduced, the design period can be shortened, and the cost can be saved.

Description

technical field [0001] The present invention relates to the technical field of resistive memory, in particular to a circuit for initializing the resistive memory and the resistive memory. Background technique [0002] Resistive Random Access Memory (RRAM) has many advantages over the current mainstream non-volatile memory Flash memory, such as simple structure, low manufacturing cost, easy integration, low operating voltage, and low power consumption. Each storage unit of RRAM is a simple two-terminal device, which can be a bipolar or unipolar device. Each storage unit is in a high-impedance state after preparation, and the storage unit needs to be initialized first. After the initialization is completed, the memory cell can complete set (transition from high resistance state to low resistance state) and reset (transition from low resistance state to high resistance state) operation at a lower voltage. [0003] At present, the power supply voltage of RRAM is generally 1.8V ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C13/00
CPCG11C13/0021
Inventor 孙海涛刘璟吕杭炳刘琦龙世兵刘明
Owner 合肥中科微电子创新中心有限公司