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Memory test system and test method thereof

A memory test and memory cell technology, applied in static memory, instruments, etc., can solve the problems of large displacement error range, memory test failure, shortening the valid period of the data window, etc., and achieve the effect of reducing delay time and displacement error.

Active Publication Date: 2019-08-27
WINBOND ELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the memory operation speed increases, the effective period of the data window is shortened
And the delay time between the clock signal and the data signal channel (data output terminal) is relatively increased by the influence of temperature, volume and pressure (PVT for short)
As a result, the data window generated by the memory unit has an excessively large displacement error range during its data validity period
Therefore, it is difficult for the memory tester to correctly obtain the valid data contained in the shifted data window affected by the PVT, resulting in failure of the memory test.

Method used

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  • Memory test system and test method thereof
  • Memory test system and test method thereof

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Embodiment Construction

[0041] First please refer to figure 1 , figure 1 It is a schematic diagram of a memory testing system according to an embodiment of the present invention. In this embodiment, the memory testing system 100 includes a memory tester 110 and a memory unit 120 . Wherein the memory unit 120 under test may be, for example, a double data rate (DDR) memory, a second generation double data rate (DDR2) memory, a low power second generation double data rate (LPDDR2) memory or a third generation double Data rate (DDR3) memory and other memory devices.

[0042] exist figure 1 Among them, the memory tester 110 may generate the data strobe signal DQS during testing. Also, the memory tester 110 may transmit the data strobe signal DQS to the memory unit 120 . In detail, the memory tester 110 outputs the write data signal DQW with the test data DT to the memory unit 120 in advance. Moreover, the memory cell under test in the memory unit 120 can store test data DT (logic 0 or 1) according t...

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Abstract

The invention provides a memory test system and a test method thereof. The memory test system includes a memory tester and a memory unit. The memory tester generates a data gating signal during testing. The memory unit detects enabling of the data gating signal during testing and outputs a test data signal having stored data to the memory tester. The memory tester judges whether the memory unit is damaged based on the test data.

Description

technical field [0001] The invention relates to a test system and a test method, in particular to a memory test system and a test method thereof. Background technique [0002] Double Data Rate (DDR) memory is a revolutionary memory technology based on Synchronous Dynamic Random Access Memory (SDRAM), which provides a high performance, low cost memory solution. Moreover, under the specifications of the new generation of low-power dynamic memory (Low Power DRAM), it provides lower power and higher-speed operation capabilities, thereby meeting the performance requirements required by today's high-speed systems. [0003] When performing a memory test, traditionally, a memory unit can generate an effective data window (Data Window) according to an external clock signal, and a memory tester obtains data for testing. However, the effective period of the data window is shortened with the improvement of the operating speed of the memory. Moreover, the delay time between the clock s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/02G11C29/48
Inventor 张昆辉
Owner WINBOND ELECTRONICS CORP
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