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Imaging device and manufacturing method therefor

A technology of imaging devices and manufacturing methods, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of reduced sensitivity, longer distance, increased speed, etc., and achieve the effect of ensuring moisture resistance

Inactive Publication Date: 2017-03-08
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In this case, when the number of wiring layers in the pixel area is increased similarly to the number of wiring layers in the peripheral circuit area, the light is incident between the microlens and the photodiode formed on the semiconductor substrate. The distance becomes longer, the light is attenuated until the rate at which light reaches the photodiode increases, and the sensitivity decreases

Method used

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  • Imaging device and manufacturing method therefor
  • Imaging device and manufacturing method therefor
  • Imaging device and manufacturing method therefor

Examples

Experimental program
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no. 1 example

[0060] An imaging device according to a first embodiment will be described. like figure 2 As shown, the pixel region PER and the peripheral circuit region PHR are defined by the separation insulating film STI on the semiconductor substrate SUB. A P-type well PW is formed in the pixel region PER. A transfer transistor TT including a photodiode PD, a gate electrode GET, etc., and a pixel transistor PT including a gate electrode GEN, etc. are formed over the P-type well PW. A protection film BF including an antireflection film ARC and the like is formed so as to cover the photodiode PD.

[0061] A plurality of P-type wells PW and a plurality of N-type wells NW are formed in the peripheral circuit region PHR. An NMOS transistor NHT including a gate electrode GENH and the like is formed over one P-type well PW. An NMOS transistor NLT including a gate electrode GENL and the like is formed over the other P-type well PW. Furthermore, a PMOS transistor PHT including a gate electr...

no. 2 example

[0093] An imaging device according to a second embodiment will be described. First, an example of a manufacturing method for an imaging device will be described. Incidentally, in the second and subsequent embodiments, the same reference numerals are assigned to the same components as those in the first embodiment, and descriptions about them are made as necessary. First, if Figure 21 As shown, through the Figure 4 to Figure 12 In the same processes as those shown, the silicon nitride film SN1 covering the fourth interlayer insulating film LIL is left as it is in the peripheral circuit region PHR, and the silicon nitride film SN1 is removed in the pixel region PER and the fourth The interlayer insulating film LIL is exposed to the outside.

[0094] Then, if Figure 22 As shown, for example, by a plasma CVD method, a silicon oxynitride film SON is formed with a film thickness of about 50 nm to about 80 nm. A silicon oxynitride film SON is formed so as to cover the fourth ...

no. 3 example

[0104] An imaging device according to a third embodiment will be described. First, an example of a manufacturing method for an imaging device will be described. First, if Figure 25 As shown, in the peripheral circuit region PHR, by using as Figure 4 to Figure 12 The same processes as those shown, the silicon nitride film SN1 covering the fourth interlayer insulating film LIL is left as it is, and the silicon nitride film SN1 is removed in the pixel region PER and the fourth interlayer insulating film LIL is exposed. on the outside.

[0105] Then, if Figure 26 As shown, for example, by a plasma CVD method, a silicon oxynitride film SON1 is formed with a film thickness of about 50 nm to about 80 nm. The silicon oxynitride film SON1 is formed so as to cover the fourth interlayer insulating film LIL in the pixel region PER. The silicon nitride oxide film SON1 is formed so as to cover the silicon nitride film SN1 in the peripheral circuit region PHR.

[0106] Then, for exa...

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Abstract

The application relates to an imaging device and a manufacturing method therefor. In the imaging device, a multilayered wiring structure is formed so as to cover a photodiode and so forth in a pixel region and a pixel transistor in a peripheral circuit region. A passivation film is formed so as to cover the multilayered wiring structure. The passivation film is interposed between a fourth interlayer insulation film and a color filter and extends from the pixel region to the peripheral circuit region in contact with the fourth interlayer insulation film. The passivation film in the peripheral circuit region is formed with a film thickness that is thicker than that of the passivation film in the pixel region.

Description

[0001] Cross References to Related Applications [0002] The entire disclosure of Japanese Patent Application No. 2015-165708 filed on Aug. 25, 2015 including specification, drawings and abstract is hereby incorporated by reference. technical field [0003] The present invention relates to an imaging device and a manufacturing method thereof, and is advantageously utilized in an imaging device including, for example, a passivation film. Background technique [0004] In an imaging device, a pixel region and a peripheral circuit region are arranged. A pixel element is formed in the pixel region, and the pixel element photoelectrically converts received light and outputs generated electrons as an analog signal. Peripheral circuit elements are formed in the peripheral circuit region, perform correction such as removing noise from an output analog signal, convert the thus corrected analog signal into a digital signal, and output the thus converted digital signal. Incidentally,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/146H01L27/1462H01L27/14683H01L27/14685H01L27/14621H01L27/14627H01L27/1463H01L27/14636H01L27/14689
Inventor 高桥史年
Owner RENESAS ELECTRONICS CORP