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A Real-time Measurement Method of Bipolar Transistor Junction Temperature in Saturation State

A bipolar transistor, real-time measurement technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problem of inaccurate measurement of bipolar transistor junction temperature, etc., and achieve the effect of simple and accurate measurement method and elimination of delay

Active Publication Date: 2019-02-19
BEIJING UNIV OF TECH
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Problems solved by technology

This measurement method can measure the junction temperature of the bipolar transistor working in the amplification region, but cannot accurately measure the junction temperature of the bipolar transistor working in the saturation region

Method used

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  • A Real-time Measurement Method of Bipolar Transistor Junction Temperature in Saturation State
  • A Real-time Measurement Method of Bipolar Transistor Junction Temperature in Saturation State
  • A Real-time Measurement Method of Bipolar Transistor Junction Temperature in Saturation State

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Embodiment Construction

[0018] The present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments.

[0019] The testing device involved in the present invention is as figure 1 shown. The bipolar transistor selected for measurement is 2N3055. The measuring instrument used for the measurement is B1500.

[0020] The detailed steps to measure the junction temperature of bipolar transistors in real time are as follows:

[0021] Step 1, connect the bipolar transistor device 1 with the device fixture 4 and the measuring instrument 3 through wires, and at room temperature (30°C), apply a pulse voltage of 0.8V to the base end and a pulse current of 100mA to the collector end through the tester 3 , make the transistor work in the saturation region, measure the base current Ibe and the collector voltage Vce.

[0022] Step 2, connect the bipolar transistor device 1 with the device fixture 4 and the measuring instrument 3 through wires, place it...

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Abstract

The invention discloses a real-time measurement method for the junction temperature of a bipolar transistor in the saturated state and relates to the testing field of semiconductor devices. According to the technical scheme of the invention, a constant base voltage and a constant collector current are provided, so that the base current Ibe and the collector current Ice of the bipolar transistor in the saturated state can be measured. The total power P is calculated according to the formula P=Vbe*Ibe+Vce*Ice, wherein Vbe represents the base voltage and Vce represents the collector voltage. Meanwhile, a junction temperature library for the corresponding relationship among the current, the power and the temperature is obtained through the interpolation calculation of the numerical analysis. Therefore, a corresponding junction temperature in the junction temperature library can be found out according to the measured base current and the total power. The junction temperature of the bipolar transistor in the saturated state can be measured, and the measurement method is simple and accurate. The junction temperature library is made out through the interpolation calculation, and then the corresponding junction temperature in the junction temperature library can be found out according to the measured base current and the calculated total power. Therefore, the switching between the testing current and the working current is not required. The condition that the junction temperature cannot be measured accurately due to the delay of a switch can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor device testing, and is mainly applied to the real-time measurement of the junction temperature of bipolar transistors working in the saturation region. Background technique [0002] The junction temperature of the transistor is an important parameter restricting the reliability of the transistor, so it is of great significance to accurately measure the junction temperature of the transistor. Li Jihong, Cao Ying, Zhang Dejun and others published "Research on the Experimental Method of Steady-state Working Life with Controllable Junction Temperature", which adopted the method of transient alternation of working current and measuring current, and measured the junction temperature by measuring the current. Current and measurement current switching introduces delays that can lead to large changes in junction temperature and inaccurate measurements. Zhu Yangjun, Miao Qinghai and others published "Real-time...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2619
Inventor 郭春生丁嫣姜舶洋苏雅冯士维
Owner BEIJING UNIV OF TECH
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