Semiconductor element with gate structure and manufacturing method thereof
A gate structure, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the size reduction of ultra-high voltage semiconductor components
Active Publication Date: 2019-12-24
MACRONIX INT CO LTD
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Problems solved by technology
However, due to the shrinking dimensions of ultra-high voltage semiconductor components, achieving these design goals becomes extremely challenging
Method used
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[0119] Hereinafter, embodiments of the present invention will be explained in detail with reference to the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
[0120] Figure 1A to Figure 1C A semiconductor device 10 is shown in accordance with an illustrated embodiment of the present invention. Figure 1A It is a top view of the semiconductor device 10 , only showing the polysilicon layer and the oxide defined (OD) region without the field oxide layer. Figure 1B It is an enlarged top view of a region A of the semiconductor element 10 . Figure 1C for along Figure 1B A cross-sectional view of the region A of the semiconductor device 10 on the A-A' cross-section line. Figure 1D It is an enlarged top view of a region B of the semiconductor element 10 . Figure 1E for along Figure 1D The cross-sectional view of the region B of the semiconductor device 10 on the B-B' cross-section l...
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The invention provides a semiconductor element with a gate structure and a manufacturing method thereof. The semiconductor element includes a substrate, a high-voltage well, a high-voltage doping region, a drain region, a source region, a first gate structure and a second gate structure. The substrate has a first conductivity type. The high voltage well has a second conductivity type and is disposed in the substrate. The high-voltage doped region has a first conductivity type and is configured in the high-voltage well. The drain region is disposed in the high-voltage well and is separated from the high-voltage doping region. The source region is configured in the high-voltage doping region. The first gate structure is disposed on the first side portion of the high-voltage doped region and is located between the source region and the drain region. The second gate structure is disposed on a second side portion of the high-voltage doped region, and the second side portion is opposite to the first side portion.
Description
technical field [0001] The disclosure relates to a semiconductor device, and more particularly to a semiconductor device with a gate structure and a manufacturing method thereof. Background technique [0002] Ultra-high voltage semiconductor devices are widely used in display devices, portable devices, and many other applications. The design goals of ultra-high voltage semiconductor devices are to include high breakdown voltage, low specific on-resistance, and high reliability in both room temperature and high temperature environments. However, due to the shrinking dimensions of ultra-high voltage semiconductor devices, achieving these design goals becomes extremely challenging. Contents of the invention [0003] According to an embodiment of the present invention, a semiconductor device includes a substrate, a high voltage well, a high voltage doped region, a drain region, a source region, a first gate structure and a second gate structure. The substrate has a first con...
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IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/0615H01L29/66325H01L29/66356H01L29/7391H01L29/7393H01L29/4238H01L29/66689H01L29/063H01L29/0692H01L29/1087H01L29/402H01L29/8611H01L29/0634H01L29/7816H01L29/7831H01L29/861
Inventor 简郁芩詹景琳林正基
Owner MACRONIX INT CO LTD