A measurement target for medium z element transmission energy flow in ablation state
A technology for transmitting energy and measuring targets, which is applied in the fields of nuclear power generation, nuclear reactors, climate sustainability, etc., can solve the problems of deviation, error, and technical difficulty of test results, and achieves the goal of reducing systematic errors, accurate comparison, and saving experimental resources. Effect
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Embodiment 1
[0042] This embodiment provides a measurement target for transmitting energy flow of Z element in an ablation state. The length of the black cavity target 1 is 1500 μm, the inner diameter is 600 μm, the thickness of the cavity wall is 30 μm, and the inner diameter of the ring formed by the convex edge is 400 μm; the first diagnostic hole 2 and the second diagnostic hole 3 are located in the middle of the black cavity target 1 , the first diagnostic hole 2 and the second diagnostic hole 3 are square holes with a length of 400 μm and a width of 250 μm; both the first sample target 4 and the second sample target 5 are squares with a side length of 460 μm, wherein the first The structure of a sample target 4 is CH / Si / CH, the thickness of each layer of the first sample target 4 is 1 μm, 0.7 μm, and 18 μm from the bottom layer to the top layer, and the structure of the second sample target 5 is CH / Ge / CH , the thickness of each layer of the second sample target 5 is 1 μm, 0.3 μm, and...
Embodiment 2
[0046] This embodiment provides a measurement target for transmitting energy flow of Z element in an ablation state. The length of the black cavity target 1 is 1500 μm, the inner diameter is 600 μm, the thickness of the cavity wall is 30 μm, and the inner diameter of the ring formed by the convex edge is 400 μm; the first diagnostic hole 2 and the second diagnostic hole 3 are located in the middle of the black cavity target 1, The first diagnostic hole 2 and the second diagnostic hole 3 are square holes with a length of 400 μm and a width of 250 μm; both the first sample target 4 and the second sample target 5 are squares with a side length of 460 μm, wherein the first The structure of the sample target 4 is CH / Si / CH, the thickness of each layer of the first sample target 4 is 1 μm, 1.2 μm, and 45 μm from the bottom layer to the top layer, and the structure of the second sample target 5 is CH / Ge / CH, The thicknesses of the layers of the second sample target 5 are 1 μm, 0.5 μm, ...
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