Method for improving photolithography technique
A lithography process and lithography technology, applied in the semiconductor field, can solve the problems of deviation and small process window, and achieve the effect of improving the lithography process and avoiding the drift of lithography topography.
Inactive Publication Date: 2017-04-26
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Therefore, on the one hand, for a single exposure area, the process conditions may not always be in the best process state; on the other hand, for other exposure areas, the process conditions may deviate; in short, the process window is relatively small
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[0019] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.
[0020] A method of improving photolithography process of the present invention comprises:
[0021] Provide a substrate with photoresist on the surface, and obtain different photolithography focal planes and corresponding process windows at different positions of the substrate;
[0022] According to the target pattern to be obtained, combine the obtained different positions and corresponding process windows; and, according to the combined process window, select different focal planes for each position;
[0023] Another substrate with photoresist on the surface is p...
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The invention provides a method for improving a photolithography technique. The method comprises steps that a substrate of which a surface has photoresist is provided, and different photolithography focal planes at different positions of the substrate and corresponding technology windows are acquired; according to a desired target pattern, the acquired different positions and the corresponding technology windows are combined; according to the technology windows after combination, different focal planes are selected for each position; another substrate of which a surface has photoresist is provided, for each position, the photolithography technique under the focal planes is implemented, photolithography for the photoresist is carried out, and the target pattern is acquired from the photoresist. The method is advantaged in that high-precision line width can be acquired, and controllable morphology of the pattern after photolithography is realized.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving a photolithography process. Background technique [0002] With the continuous development of integrated circuit technology, the characteristic line width of devices is getting smaller and smaller, and the requirements for photolithography technology are getting higher and higher. In order to obtain the critical dimension (Critical Dimension, CD) and photoresist morphology that meet the requirements, the focus energy matrix (Focus Energy Matrix, FEM) test must be carried out first to obtain the appropriate process conditions, focus depth and exposure energy, and then A photolithography process is performed. [0003] However, during the photolithography process, the focus and exposure energy are no longer changed. Therefore, on the one hand, for a single exposure area, the process conditions may not always be in the optimal process state; on the othe...
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IPC IPC(8): H01L21/027G03F7/00
CPCH01L21/0274G03F7/0035
Inventor 储佳
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT