Friction electronics tuning diode and modulator circuit applying same

A technology for modulating circuits and electronics, applied in the field of flexible electronics, can solve the problems of lack of electronic circuit regulation, etc., and achieve the effects of low cost, simple preparation process and wide selection of materials

Active Publication Date: 2017-05-03
BEIJING INST OF NANOENERGY & NANOSYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the current electronic devices lack an effective direct interaction mechanism with the externa

Method used

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  • Friction electronics tuning diode and modulator circuit applying same
  • Friction electronics tuning diode and modulator circuit applying same
  • Friction electronics tuning diode and modulator circuit applying same

Examples

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no. 1 example

[0044] In the triboelectronics tuning diode proposed in the first embodiment of the present invention, the triboelectric nanogenerator included in it is an independent triboelectric nanogenerator, and the independent triboelectric nanogenerator includes: a static friction layer, including: a first static friction layer and a second a static friction layer; and a dynamic friction layer located above the static friction layer, and the dynamic friction layer and the static friction layer are materials located in different positions of the triboelectric series.

[0045] The first static friction layer and the second static friction layer may be conductive thin films, such as copper films. The dynamic friction layer may be an organic film, such as a PTFE (polytetrafluoroethylene) film.

[0046] The following combination Figure 2-4 The triboelectronics tuning diode provided in the first embodiment of the present invention will be described in detail. figure 2It is a schematic st...

no. 3 example

[0061] In the third embodiment of the present invention, another triboelectronics tuning diode is provided. Figure 6 It is a schematic structural diagram of a triboelectronics tuning diode according to the third embodiment of the present invention. Such as Figure 6 As shown, in the triboelectronics tuning diode proposed by the third embodiment of the present invention, the triboelectric nanogenerator included in it is a sliding triboelectric nanogenerator, and the sliding triboelectric nanogenerator includes a first triboelectrode 15 and a second triboelectrode 16. The two periodically slide relative to each other in the horizontal direction, forming a periodically changing electrostatic potential applied to both ends of the PN junction element, thereby regulating the junction capacitance of the PN junction element. The equivalent capacitance value of the whole device depends on the size of the relative sliding distance d between the first and second friction electrodes.

...

no. 5 example

[0067] In a fifth embodiment of the present invention, a frequency modulation circuit using triboelectronic tuning diodes is provided. Using triboelectronics to tune the capacitance of the basic unit of the diode can be regulated by external force, demonstrating its application in the field of analog signal modulation. Among them, the triboelectric nanogenerators used in triboelectronics tuning diodes include all types of triboelectric nanogenerators or triboelectric nanogenerator arrays that can provide adjustable electrostatic potentials, including but not limited to sliding triboelectric nanogenerators, contact separation Frictional nanogenerators, independent frictional nanogenerators, rotary frictional nanogenerators, etc.

[0068] Figure 8 For the application of triboelectronics tuning diodes in frequency modulation circuits according to the fifth embodiment of the present invention, Figure 8 (a) is a schematic diagram of a frequency modulation circuit using triboele...

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Abstract

The invention provides a friction electronics tuning diode and a modulator circuit applying the friction electronics tuning diode. The friction electronics tuning diode comprises a friction nanometer electric generator, an impedance element and a PN junction element; the first end of the PN junction element is connected to the first output end of the friction nanometer electric generator, and the second end of the PN junction element is connected to the second output end of the friction nanometer electric generator through the impedance element, wherein the first end of the PN junction element is further connected to the first output end of the friction electronics tuning diode, the second end of the PN junction element is connected to the second output end of the friction electronics tuning diode, and the junction capacitance of the PN junction element is regulated and controlled by an adjustable electrostatic potential generated by the friction nanometer electric generator under the effect of external force. Active modulation of the friction nanometer electric generator for PN junction equivalent capacitance is realized, and active human-machine interaction modulation for analog signals is realized, so that the preparation technology is simple, the material selection is wide, and the cost is relatively low.

Description

technical field [0001] The invention relates to the field of flexible electronics, in particular to a triboelectronics tuning diode and a modulation circuit using the same. Background technique [0002] With the development of society, people's demand for electronic devices in the fields of instant messaging, smart wearable devices, personal health monitoring and wireless sensing is increasing and the requirements are getting higher and higher. However, most of the current electronic devices lack an effective direct interaction mechanism with the external environment, and it is difficult for people to actively participate in the regulation of electronic circuits. In the field of electronic circuit control, analog signal modulation plays a very important role. How to realize the active human-computer interaction modulation of analog signals has become a huge challenge for researchers. [0003] In 2012, the research group of Professor Wang Zhonglin of the Georgia Institute of...

Claims

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Application Information

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IPC IPC(8): H01G7/00H02N1/04H03H9/46H03H9/66
Inventor 张弛王中林杨智伟周桃
Owner BEIJING INST OF NANOENERGY & NANOSYST
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