Copper cmp online measuring point real-time positioning method and system

Abstract

The invention discloses a real-time locating method and system for a copper CMP online measuring point. The real-time locating method and system for the copper CMP online measuring point comprises the steps that the initial angle position of a wafer, the initial angle position of a probe and the initial circle center distance between the initial position of the wafer and the initial position of a polishing disk are read; a method combining instant updating and parameter estimation is adopted to calculate the current rotation angle of the probe of an eddy current sensor, the current rotation angle of the wafer and the current circle center distance between the wafer and the center of the polishing disk when the wafer swings along with the polishing disk in the radial direction; and the movement increments of the probe of the eddy current sensor and the wafer relative to the initial positions are calculated, and the coordinates of the probe of the probe of the eddy current sensor on the surface of the wafer are calculated according to the movement locus equation of the probe of the eddy current sensor on the surface of the wafer. The real-time locating method and system for the copper CMP online measuring point achieve real-time locating of the measuring point in the copper CMP technological process, rapid matching between the current measurement values and the coordinates of the measuring point can be achieved, and the technological demands of copper CMP online measurement are better met.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical planarization, in particular to a method and system for real-time positioning of copper CMP online measurement points. Background technique [0002] Chemical Mechanical Planarization (CMP for short) technology is the most effective global planarization method today. It utilizes the synergistic effect of chemical etching and mechanical grinding, which can effectively take into account the local and global flatness of the wafer, and has been widely used in the manufacture of VLSI. During the CMP process, the amount of material removed needs to be precisely controlled. If effective monitoring cannot be achieved, it will be impossible to avoid the occurrence of wafer "over-throw" or "under-throw". Due to the harsh process environment of copper CMP, the realization of online measurement is very difficult. [0003] At present, for the copper CMP process, an online measurement module based...

AI Technical Summary

Problems solved by technology

However, due to the special process of copper CMP, the effective measurement signal collected by the eddy current sensor is only the part when the probe moves below the wafer, and the effective measurement trajectory and effective sampling points are not fixed, which further increases the online processing and processing time. Difficulty in analyzing measurement data

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