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Transistor devices and methods

A transistor and device technology, applied in the field of semiconductor devices

Active Publication Date: 2019-11-05
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing solutions for reducing these parasitics and for managing high currents and voltages are not optimal for meeting the increasing demands of the electronics industry

Method used

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  • Transistor devices and methods
  • Transistor devices and methods
  • Transistor devices and methods

Examples

Experimental program
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Embodiment Construction

[0014] The present disclosure pertains to transistor devices and methods. In the following description, for purposes of explanation, several examples and specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to those skilled in the art that the present disclosure as described in the claims may include some and all of the features in these examples alone or in combination with other features described below, and may further include Modifications and equivalents of features and concepts.

[0015] figure 1 An exemplary transistor 100 is shown according to one embodiment. In this example, transistor 100 is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Transistor 100 includes drain 110, gates 120A-B, and sources 130A-B. In this example, the source and gate include two structures 120A and 120B on opposite sides 110A and 110B of the drain 110 . In particular, the drain 110 includes a l...

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Abstract

The present disclosure includes transistor devices and methods. In one embodiment, a transistor includes a gate, a source and a drain. According to one aspect of the present disclosure, different resistive paths in the drain are compensated for using different gate-to-drain capacitances. According to another aspect of the present disclosure, current enters the drain at the center tap and flows symmetrically out under the two adjacent gates to the two adjacent sources.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Application No. 14 / 486,969 filed September 15, 2014, the contents of which are hereby incorporated by reference in their entirety for all purposes. technical field [0003] The present disclosure relates to semiconductor devices and methods, and in particular to transistor devices and methods. Background technique [0004] The performance requirements for electronic circuits continue to gradually increase. The basic building block of nearly all electronic circuits is the transistor. As transistors operate at even higher speeds, parasitic effects within the device are becoming more and more of a problem. For example, when current flows through the terminals of a transistor device, internal resistance can cause a voltage drop, which can drain power and reduce the efficiency of the circuit. This internal resistance can place limitations on device size for a particular application...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/40H01L29/417H01L29/78H03K17/16H01L23/522
CPCH01L29/402H01L29/41758H01L29/41775H01L29/7824H01L29/7835H03K17/162H01L23/522H01L2924/0002H01L2924/00H01L29/78624H01L29/7816
Inventor A·斯库德里
Owner QUALCOMM INC