Substrate etching method
A substrate and main etching technology, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc. The bottom width and height are satisfied, and the effect of increasing the bottom width of the graphic
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[0046] The following is a specific embodiment of the substrate etching method provided by the present invention, the substrate etching method specifically includes the following steps:
[0047] Main etching step, which further comprises step ME1 and step ME2, wherein,
[0048] The process parameters of step ME1 are: the chamber pressure of the reaction chamber is 2.5mT; the power of the upper electrode is 1400W; the power of the lower electrode is 350W; the flow rate of the etching gas is 80sccm; the process time is 18min;
[0049] The process parameters of step ME2 are: the chamber pressure of the reaction chamber is 2.5mT; the power of the upper electrode is 1400W; the power of the lower electrode is 350W; the etching gas is 80sccm; the process time is 7min;
[0050] Overetching step, which further includes step OE1 and step OE2, wherein,
[0051] The process parameters of step OE1 are: the chamber pressure of the reaction chamber is 2.2mT; the power of the upper electrode ...
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