Supercharge Your Innovation With Domain-Expert AI Agents!

A cmos integrated circuit for suppressing the leakage current of the current mirror

An integrated circuit, a technology for suppressing current, applied in the direction of transistors, etc., can solve the problems of deviation and the light sensor can not work normally, and achieve the effect of low noise figure

Active Publication Date: 2019-04-26
CRM ICBG (WUXI) CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In dim light, I 0 Extremely weak, usually in the pA level (10 -12 A), then the output I leak with I light Compared to both approximate or I leak larger, the output I out The deviation is serious, causing the light sensor to not work properly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A cmos integrated circuit for suppressing the leakage current of the current mirror
  • A cmos integrated circuit for suppressing the leakage current of the current mirror
  • A cmos integrated circuit for suppressing the leakage current of the current mirror

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Such as figure 2 As shown, in this embodiment, the first channel is a P channel, and the second channel is an N channel.

[0040] The CMOS circuit for suppressing leakage current of the current mirror provided in this embodiment includes a photoelectric conversion circuit a, a current mirror amplification circuit b, and a circuit c for suppressing leakage current of the current mirror.

[0041] The photoelectric conversion circuit a includes a photoelectric tube D0, a photoelectric tube D1, and PMOS tubes P0 and P1. The positive pole of D0 is electrically connected to the low potential GND, the negative pole of D0 is electrically connected to the D terminal of P0, the G terminal of P0 is electrically connected to the D terminal of P0, and P1 The G terminal of P1 is electrically connected to the G terminal of P0, and the D terminal of P1 is electrically connected to the negative pole of D1. D0 and D1 have the same area, D0 is covered with a shielding layer such as meta...

Embodiment 2

[0047] Such as image 3 As shown, in this embodiment, the first channel is an N channel, and the second channel is a P channel.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) integrated circuit for suppressing a leakage current of a current mirror. The CMOS integrated circuit comprises a current mirror amplifying circuit and a current mirror leakage current suppressing circuit. The invention further discloses an ambient light sensor circuit containing the current mirror leakage current suppressing circuit. By arranging the current mirror leakage current suppressing circuit, another passage is provided for a first-level current mirror leakage current and a second-level current mirror leakage current of the current mirror amplifying circuit, and the first-level current mirror leakage current and the second-level current mirror leakage current of the current mirror amplifying circuit cannot enter an input end of a third-level current mirror of the current mirror amplifying circuit and cannot be amplified and output by the third-level current mirror of the current mirror amplifying circuit, so that low noise coefficients of the current mirror amplifying circuit are guaranteed, and the current mirror amplifying circuit can adapt to relatively high requirements.

Description

technical field [0001] The invention relates to the technical field of integrated circuits. More particularly, it relates to a CMOS integrated circuit for suppressing current mirror leakage. Background technique [0002] The Ambient Light Sensor (ALS) can sense the surrounding light conditions and inform the processing chip to automatically adjust the brightness of the display backlight to reduce power consumption of the product. The ambient light sensor includes a photocell for detecting ambient light and a multi-stage current amplifier. When the photocell converts ambient light into photocurrent, the multi-stage current mirror amplifier amplifies the photocurrent and outputs it, thereby realizing photoelectric conversion. In real life, ambient light sensors are needed in televisions, computer monitors, infrared cameras, mobile phones, digital cameras, smart switches, etc. [0003] The traditional current mirror amplifier amplifies the photocurrent converted by the photoe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/092
CPCH01L27/092
Inventor 刘珍利周盛
Owner CRM ICBG (WUXI) CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More