Unlock instant, AI-driven research and patent intelligence for your innovation.

Microelectronic component system with multiple substrates and corresponding manufacturing method

A manufacturing method and microelectronic technology, which can be applied in microelectronic microstructure devices, electrical components, microstructure technology, etc., can solve problems such as difficulties in miniaturized configuration, and achieve the effect of tight stacking structure.

Active Publication Date: 2019-07-19
ROBERT BOSCH GMBH
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Further miniaturization is difficult here because identical wafer parameters and simultaneously identical lateral dimensions are necessary for the wafer / wafer bonding process used here

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microelectronic component system with multiple substrates and corresponding manufacturing method
  • Microelectronic component system with multiple substrates and corresponding manufacturing method
  • Microelectronic component system with multiple substrates and corresponding manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In the figures, identical reference numbers designate identical or functionally identical elements.

[0025] figure 1 A schematic vertical cross-sectional view is shown for explaining a microelectronic component system with a plurality of substrates according to an embodiment of the invention.

[0026] exist figure 1 Reference numeral C1 in the figure denotes a first circuit substrate having a first degree of integration. The degree of integration here is a measure for the smallest structural parameter, which in the present example is less than or equal to 180 nm (nanometers). The higher the degree of integration, the smaller the minimum structural parameters.

[0027] In particular, the first substrate C1 has digital circuitry SE1. Such a substrate C1 can be produced today with a 300-mm wafer process. The first substrate C1 can be crimped onto the carrier element T by means of crimp connections L1 , L2 , the digital circuitry SE1 being oriented towards the carrier...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a microelectronic component system with a plurality of substrates and a corresponding production method. A microelectronic building block system having a plurality of substrates comprising a first substrate (C1) configured as a circuit substrate with a first degree of integration, a second substrate (C2) configured as a circuit substrate with a second degree of integration, and a third substrate ( C3 ), the third substrate is configured as a MEMS-sensor substrate and is crimped onto the second substrate ( C2 ). The second and third substrates are crimped onto the first substrate ( C1 ). The first degree of integration is substantially greater than the second degree of integration.

Description

technical field [0001] The invention relates to a microelectronic component system having a plurality of substrates and a corresponding production method. Background technique [0002] Although any micromechanical component system can also be used, the invention and the problem on which it is based are explained with the aid of a MEMS substrate system, which has a silicon-based chip. [0003] A small electrical component is known from DE 10 2010 006 132 A1 with a stack of MEMS-substrates and ASIC-substrates, wherein the MEMS-substrates and ASIC-substrates are arranged one above the other in a stack configuration and A gap is arranged between the MEMS substrate and the ASIC substrate. [0004] DE 10 2008 043 735 A1 describes a system of at least two wafers with crimp connections and a corresponding production method. [0005] DE 10 2007 048 604 A1 describes a combination consisting of at least two semiconductor substrates and a corresponding method, in which a layer contain...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
CPCB81C1/00238B81B2201/0235B81B2201/0214B81B2201/0264B81C2203/0792H01L2224/16225
Inventor R.诺伊尔T.奥姆斯F.霍伊克F.安特C.舍林M.哈塔斯
Owner ROBERT BOSCH GMBH