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Manufacturing method for color color-resistor

A production method and color resistance technology, which are applied in the photoengraving process, optics, optomechanical equipment and other directions of the pattern surface, which can solve the problems of inability to measure the position error of color resistance, and color blocks being easily peeled off.

Active Publication Date: 2017-07-04
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the smaller color blocks will be at risk of being easily peeled off
[0007] The defect of the manufacturing method of the color color resistance in the prior art is that when the width of the sub-pixel is smaller than the width of the color block in the high PPI mode, there will be overlapping between the color blocks, which makes it impossible to measure the position error of the color color resistance problems, and making the color blocks smaller will have the risk that the smaller color blocks will be easily peeled off

Method used

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  • Manufacturing method for color color-resistor
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  • Manufacturing method for color color-resistor

Examples

Experimental program
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Effect test

no. 1 example

[0049] As an example, this embodiment mainly focuses on the description of the manufacturing method of the color resistance of three sub-pixels.

[0050] Figure 5 A schematic flow chart showing a method for manufacturing a color resist according to a first embodiment of the present invention is shown. Such as Figure 5 As shown, the manufacturing method may include the following steps S510 to S570.

[0051] In the following process steps S510 to S570, only two photomasks can be used to manufacture the color resist. These two masks can be called black matrix masks and color resist masks. The black matrix mask can include a mask pattern of an alignment mark (Alignment Mask) (that is, a first mark, a second mark and a third mark) and a hollow area (that is, a first hollow area, a second hollow area and a third hollow area). Hollow area) mask pattern. The color resist mask can include alignment marks, alignment monitoring marks (Overlay Mask) (that is, the first color block,...

no. 2 example

[0078] As an example, this embodiment mainly focuses on the description of the manufacturing method of the color resistance of four sub-pixels.

[0079] Figure 9 A schematic flowchart showing a method for manufacturing a color resist according to a second embodiment of the present invention. Such as Figure 9 As shown, the manufacturing method may include the following steps S910 to S990.

[0080] Same as the first embodiment, the following process steps S910 to S990 can also use only two photomasks to manufacture the color resist. These two masks can be called black matrix masks and color resist masks. The black matrix mask can include mask patterns of alignment marks (i.e., first marks, second marks, third marks and fourth marks) and hollow areas (i.e., first hollow areas, second hollow areas, third the mask patterns of the hollowed-out area and the fourth hollowed-out area). The color resist mask may include alignment marks, alignment monitoring marks (first color blo...

no. 3 example

[0106] Different from the first embodiment, this embodiment provides another configuration solution for the first distance and the second distance.

[0107] Specifically, the first distance H 1 Meet: H 1 =n 1 *V. Among them, n 1 to satisfy n 1 ≥1 or n 1 Integer ≦-1, V is the length of the sub-pixel. Second distance H 2 Meet: H 2 =n 2 *V. Among them, n 2 equal to n 1 , V is the length of the sub-pixel.

[0108] It should be noted that when n 1 to satisfy n 1 ≥1 integer, and n 2 equal to n 1 , the color resist mask moves down. when n 1 to satisfy n 1 Integer ≦-1, and n 2 equal to n 1 , the color resist mask moves up.

[0109] Specifically, take n 1 = 1, n 2 =1, H can be obtained 1 =V,H 2 =V. That is, the initial alignment of the color resist mask is formed as Figure 15 shown in the first color resist 801 and as Figure 14 After the first color block 704 is shown, the color-resist mask moves from the initial position to the lower right as shown in ...

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Abstract

The invention discloses a manufacturing method for a color color-resistor. The method comprises: forming a black matrix layer with a first mark, a second mark, a third mark, a first hollowed-out region, a second hollowed-out region, and a third hollowed-out region on a substrate; moving a photomask in sequence to make an alignment mark respectively align with each mark; respectively using a photomask to form a first color-resistor and a first color block, a second color-resistor and a second color block, and a third color-resistor and a third color block on the black matrix layer, and according to position relations of each color block and corresponding hollowed-out region, checking the position of each color resistor; a first distance on a vertical direction being between the first mark / first hollowed-out region and the second mark / second hollowed-out region, a second distance on a vertical direction being between the first mark / first hollowed-out region and the third mark / third hollowed-out region; the first distance and the second distance being configured to make the first color block, the second color block and the third color block not overlay. Using the scheme can make each color block not overlay on the premise of not changing sizes of the color blocks.

Description

technical field [0001] The invention relates to the technical field of manufacturing a color filter substrate, in particular to a method for manufacturing a color color resist. Background technique [0002] At present, when making color color resists, the number of masks and the production cost can be reduced by using the same mask to prepare color color resists and corresponding color blocks for detection. [0003] When starting to manufacture color color resist, it is necessary to use a black matrix mask to form an alignment mark on the base substrate. figure 1 It is a schematic diagram of an alignment mark in the prior art. Such as figure 1 As shown, the alignment mark (Alignment Mark) includes an alignment mark 101 and an alignment mark 102 . Wherein, the black matrix (BM on Glass) on the glass substrate has an alignment mark 101 . The alignment mark 102 is set on the RGB mask (RGB Mask). [0004] The alignment mark 101 specifically includes three black matrix align...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1335G03F7/00
CPCG02F1/133512G03F7/0007
Inventor 甘启明
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD