Lower electrode mechanism of reaction chamber and reaction chamber

Abstract

The invention provides a lower electrode mechanism of a reaction chamber and the reaction chamber. The lower electrode mechanism of the reaction chamber comprises a base for bearing a processed workpiece and a lower electrode cavity arranged below the base, wherein the lower electrode cavity comprises electromagnetic shielding space and non-electromagnetic shielding space which are isolated mutually; the electromagnetic shielding space and the non-electromagnetic shielding space are communicated with the outside through passing through the cavity of the lower electrode cavity and a first leading-in channel and a second leading-in channel on the side wall of the reaction chamber, and thus, a first part in the electromagnetic shielding space can be prevented from being disturbed by a second part from the non-electromagnetic shielding space. According to the lower electrode mechanism provided by the invention, the phenomenon that the electric field uniformity is influenced due to radio frequency disturbing can be avoided, and radio frequency leakage can also be reduced.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a lower electrode mechanism of a reaction chamber and the reaction chamber. Background technique [0002] Inductively coupled plasma etching (Inductive Coupled Plasma, hereinafter referred to as ICP) equipment is widely used in the field of semiconductor wafers, especially in the field of silicon etching. [0003] Existing ICP equipment mainly includes an air inlet mechanism, an upper electrode mechanism, and a lower electrode mechanism, wherein the air inlet mechanism is used to deliver process gas into the reaction chamber; the upper electrode mechanism is used to excite the process gas to form plasma; the lower electrode mechanism It is used to carry the workpiece to be processed, and apply a radio frequency bias to the workpiece to attract plasma to etch the surface of the workpiece to be processed. [0004] The lower electrode mechanism includes a base for carrying...

AI Technical Summary

Problems solved by technology

[0006] First, in the above-mentioned lower electrode cavity, there is mutual interference between the radio frequency connection post and other metal parts, which affects the uniformity of the electric field

[0007] Second, the above-mentioned RF connection posts, mounting plates, and bases are all conductive materials, and the three are connected to each other, resulting in RF leakage, which affects the stability of RF

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