A thin film inductor, power conversion circuit and chip
A technology of power conversion circuit and film, which is applied in the direction of circuits, inductors, fixed inductors, etc., can solve the problems of burning loads, current surges, etc., and achieve the effect of improving safety performance
Active Publication Date: 2019-11-05
HUAWEI MACHINERY
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- Application Information
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Problems solved by technology
When the thin film inductor is located in the power conversion circuit, the current in the power conversion circuit will increase sharply, and the load will be burned in severe cases
Method used
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[0048] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings in this application.
[0049] It should be understood that the thin film inductor of the present application can be applied to power conversion circuits, and can also be applied to other circuits, which is not limited in the present application.
[0050] First, a brief introduction is made to the thin film inductors in the prior art. See attached Figure 1A , Figure 1A It is a cross-sectional view of a thin film inductor in the prior art. The thin film inductor 100 includes a thin film magnetic core 110 and a conductor 120 , and the conductor 120 is located in the inner cavity of the thin film magnetic core 110 . After the conductor 120 is energized, the magnetic flux path generated by each layer of magnetic thin film in the thin film magnetic core 110 is the corresponding magnetic thin film in such as Figure 1A The circular path in...
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Abstract
The present application provides a thin film inductor, the thin film inductor includes a multilayer magnetic film, the multilayer magnetic film at least includes adjacent first magnetic film and second magnetic film, the first magnetic film is nested in the first magnetic film In two magnetic films, and the relative permeability of the first magnetic film is smaller than the relative permeability of the second magnetic film, and the relative permeability of the first magnetic film and the relative permeability of the second magnetic film The difference between the relative magnetic permeability is greater than or equal to the first threshold, wherein, when the magnetic induction of the second magnetic film reaches the saturation magnetic induction of the second magnetic film, the magnetic induction of the first magnetic film The magnetic induction is less than or equal to the saturation magnetic induction of the first magnetic film. Adopting the present application can avoid the problem that the inductance of the thin-film inductor drops sharply due to the fact that the first magnetic thin film is easy to reach magnetic saturation. In addition, the present application also provides corresponding power conversion circuits and chips.
Description
technical field [0001] The present application relates to the field of circuits, and more specifically, to a thin film inductor, a power conversion circuit and a chip. Background technique [0002] In the prior art, the thin-film magnetic core of the thin-film inductor is formed by nesting layers of magnetic thin films. In the multilayer magnetic film, usually, the magnetic induction of the inner magnetic film reaches the saturation magnetic induction of the inner magnetic film faster than the outer magnetic film reaches the saturation magnetic induction of the outer magnetic film. When the magnetic induction of the inner magnetic film reaches the saturation magnetic induction of the inner magnetic film, the relative permeability of the inner magnetic film will be close to zero, so that the inductance of the thin film inductor will drop sharply. When the thin film inductor is located in the power conversion circuit, the current in the power conversion circuit will increase ...
Claims
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IPC IPC(8): H01F27/245H01F10/08H01F17/00H02M3/07
CPCH02M3/07H01F10/08H01F17/0013H01F27/245H01F2017/0066H01F17/0006H01F17/06H01F2003/106H01F10/14H01F10/16H01L28/10H01F41/32H02M3/158
Inventor 杨仕军杨和钱朱勇发陈为
Owner HUAWEI MACHINERY