Trench heat dissipation structure for semiconductor devices

Abstract

The invention discloses a trench type heat dissipation structure used for a semiconductor apparatus. According to an embodiment, the trench type heat dissipation structure comprises a first semiconductor substrate, a heat source, at least one first heat conducting layer, at least one first heat conductor, at least one heat dissipation trench, and at least one second heat conducting structure, wherein the heat source is positioned on or belongs to the first semiconductor substrate, and comprises at least one hot spot; the at least one first heat conductor is used for connecting the at least one hot spot and the at least one first heat conducting layer; and the at least one second heat conducting structure is used for connecting the at least one first heat conducting layer and the at least one heat dissipation trench, so that the heat of the heat source is conducted to the heat dissipation trench.

Description

technical field [0001] The present invention relates to heat dissipation structures, in particular to heat dissipation structures for semiconductor devices. Background technique [0002] Semiconductor devices generate heat during operation, so a heat dissipation design is required to prevent operation from being affected. At present, the heat dissipation design of semiconductor devices mostly belongs to the package level or printed circuit board level. The heat dissipation design at the package level usually uses an external heat sink to dissipate heat from the packaged semiconductor device, while the heat dissipation design at the printed circuit board level usually uses The heat dissipation device is used to dissipate heat as a whole on the printed circuit board provided with the semiconductor device. The effect of the above heat dissipation design decreases with the evolution of the semiconductor manufacturing process. For advanced manufacturing processes (such as 55 nm ...

AI Technical Summary

Problems solved by technology

The effect of the above heat dissipation design decreases with the evolution of the semiconductor manufacturing process. For advanced manufacturing processes (such as 55 nm or below), due to smaller transistors, they are more concentrated (more transistors per unit area) The number of transistors) and the smaller metal line width and line spacing make it difficult to dissipate heat, which gradually makes these heat dissipation designs insufficient.

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