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Soluble bipolar host material with high glass-transition temperature and preparation and application thereof

A technology with high vitrification and transition temperature, applied in semiconductor/solid-state device manufacturing, organic chemistry, electrical solid-state devices, etc., to achieve simple synthesis, good film-forming properties, and high yield

Active Publication Date: 2018-01-05
SOUTH CHINA UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, when preparing OLED devices by solution processing, the existing high-performance host materials face challenges in synthesis and purification.

Method used

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  • Soluble bipolar host material with high glass-transition temperature and preparation and application thereof
  • Soluble bipolar host material with high glass-transition temperature and preparation and application thereof
  • Soluble bipolar host material with high glass-transition temperature and preparation and application thereof

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Embodiment 1

[0046] The structural formula of the bipolar host material of this embodiment is as follows:

[0047]

[0048] The preparation method of the soluble bipolar host material t-BuCz-m-NPBI of the present embodiment comprises the following steps:

[0049] Step 1: Preparation of 3,6-bis(tert-butyl)carbazole (1), the formula is as follows:

[0050]

[0051] Carbazole (5g, 0.03mmol) was dissolved in dichloromethane, after evacuating the air for 30 minutes, aluminum trichloride (4g, 0.03mmol) was added, cooled to 0°C, tert-butyl chloride (5.8g, 0.063mmol) was added, The reaction was stirred overnight (12h); after the reaction was completed, sodium hydroxide aqueous solution was added to neutralize excess aluminum trichloride, and after the solvent was removed under reduced pressure, the reaction mixture was poured into water and extracted with dichloromethane; the organic layer was washed with anhydrous Dry over magnesium sulfate, filter, remove the solvent under reduced pressure ...

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Abstract

The invention belongs to the technical field of organic light-emitting diodes and discloses a soluble bipolar host material with high glass-transition temperature and preparation and application thereof. The structure of the bipolar host material is as shown in the formula I. the method comprises the following steps: (1) in a catalyst system, 3,6-di(t-butyl)carbazole and 1,3-dibromobenzene reactsto obtain a product containing 3-bromophenyl; (2) under the alkaline condition and under the action of a catalyst, the product containing 3-bromophenyl reacts with bispinacolatodiboronmin to obtain aproduct containing boric acid ester; (3) in a catalytic system, the product containing boric acid ester and 1-(3-bromobenzene)-2-(4-t-butyl benzene)-benzimidazole are subjected to a coupling reactionto obtain the bipolar host material. The bipolar host material has good dissolvability and is easy for solution processing, has high glass-transition temperature and high triplet state energy, can raise efficiency and stability of a luminescent device, and is easy to synthesize.

Description

technical field [0001] The invention relates to an organic small molecule host material, in particular to a soluble host material with high glass transition temperature, bipolarity and high triplet energy level, its synthesis method and its application in light-emitting devices. Background technique [0002] Organic light-emitting diodes (OLEDs) hold great promise for novel electroluminescent displays and lighting applications. At present, the preparation of OLEDs is widely based on the vacuum evaporation process, and the material utilization rate is low. Therefore, solution processing OLED devices, such as using inkjet printing technology, can greatly improve the utilization rate of materials, and has potential low-cost advantages in the preparation of large-scale display and lighting devices. [0003] However, when preparing OLED devices by solution processing, the existing high-performance host materials face challenges in synthesis and purification. In the present inve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D403/10H01L51/54
Inventor 朱旭辉何梦娇金广穆兰彭灵彭俊彪曹镛
Owner SOUTH CHINA UNIV OF TECH
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