Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Soluble high glass transition temperature bipolar host material and its preparation and application

A technology with high glass transition and transition temperature, applied in semiconductor/solid-state device manufacturing, organic chemistry, electric solid-state devices, etc., to achieve the effects of good solubility, improved efficiency, stability, and good thermal stability

Active Publication Date: 2020-04-28
SOUTH CHINA UNIV OF TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when preparing OLED devices by solution processing, the existing high-performance host materials face challenges in synthesis and purification.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Soluble high glass transition temperature bipolar host material and its preparation and application
  • Soluble high glass transition temperature bipolar host material and its preparation and application
  • Soluble high glass transition temperature bipolar host material and its preparation and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The structural formula of the bipolar host material of this embodiment is as follows:

[0047]

[0048] The preparation method of the soluble bipolar host material t-BuCz-m-NPBI of the present embodiment comprises the following steps:

[0049] Step 1: Preparation of 3,6-bis(tert-butyl)carbazole (1), the formula is as follows:

[0050]

[0051] Carbazole (5g, 0.03mmol) was dissolved in dichloromethane, after evacuating the air for 30 minutes, aluminum trichloride (4g, 0.03mmol) was added, cooled to 0°C, tert-butyl chloride (5.8g, 0.063mmol) was added, The reaction was stirred overnight (12h); after the reaction was completed, sodium hydroxide aqueous solution was added to neutralize excess aluminum trichloride, and after the solvent was removed under reduced pressure, the reaction mixture was poured into water and extracted with dichloromethane; the organic layer was washed with anhydrous Dry over magnesium sulfate, filter, remove the solvent under reduced pressure ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of organic light-emitting diodes and discloses a soluble bipolar host material with high glass-transition temperature and preparation and application thereof. The structure of the bipolar host material is as shown in the formula I. the method comprises the following steps: (1) in a catalyst system, 3,6-di(t-butyl)carbazole and 1,3-dibromobenzene reactsto obtain a product containing 3-bromophenyl; (2) under the alkaline condition and under the action of a catalyst, the product containing 3-bromophenyl reacts with bispinacolatodiboronmin to obtain aproduct containing boric acid ester; (3) in a catalytic system, the product containing boric acid ester and 1-(3-bromobenzene)-2-(4-t-butyl benzene)-benzimidazole are subjected to a coupling reactionto obtain the bipolar host material. The bipolar host material has good dissolvability and is easy for solution processing, has high glass-transition temperature and high triplet state energy, can raise efficiency and stability of a luminescent device, and is easy to synthesize.

Description

technical field [0001] The invention relates to an organic small molecule host material, in particular to a soluble host material with high glass transition temperature, bipolarity and high triplet energy level, its synthesis method and its application in light-emitting devices. Background technique [0002] Organic light-emitting diodes (OLEDs) hold great promise for novel electroluminescent displays and lighting applications. At present, the preparation of OLEDs is widely based on the vacuum evaporation process, and the material utilization rate is low. Therefore, solution processing OLED devices, such as using inkjet printing technology, can greatly improve the utilization rate of materials, and has potential low-cost advantages in the preparation of large-scale display and lighting devices. [0003] However, when preparing OLED devices by solution processing, the existing high-performance host materials face challenges in synthesis and purification. In the present inve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C07D403/10H01L51/54
Inventor 朱旭辉何梦娇金广穆兰彭灵彭俊彪曹镛
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products