Modified g-C3N4 quantum dot / TiO2 nanowire photo-anode and application thereof

A nanowire and quantum dot technology, applied in the field of modified g-C3N4 quantum dots/TiO2 nanowire photoanode, can solve problems such as environmental pollution and photocorrosion, and achieve the effects of simple process, easy operation and excellent stability.

Active Publication Date: 2018-02-09
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, quantum dots such as cadmium selenide have serious photocorrosion and environmental pollution caused by heavy metal elements.

Method used

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  • Modified g-C3N4 quantum dot / TiO2 nanowire photo-anode and application thereof
  • Modified g-C3N4 quantum dot / TiO2 nanowire photo-anode and application thereof
  • Modified g-C3N4 quantum dot / TiO2 nanowire photo-anode and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0031] Example 1 A modified g-C 3 N 4 Quantum dots / TiO 2 Nanowire Photoanodes 1

[0032] A modified g-C 3 N 4 Quantum dots / TiO 2 nanowire photoanodes, the modified g-C 3 N 4 Quantum dots / TiO 2 The preparation method of nanowire photoanode is as follows:

[0033] (1) Place the FTO conductive glass in the growth solution, in which hydrochloric acid, tetrabutyl titanate, and water mixed solution are used as the growth solution, and TiO is synthesized on FTO by solvothermal synthesis at 150°C for 15 hours 2 array of nanowires; the prepared TiO 2 nanowire arrays with N 2 Blow dry for later use;

[0034] (2) Put g-C in the crucible 3 N 4 The precursor dicyandiamide and barbituric acid, the mass ratio of dicyandiamide and barbituric acid is 50:1, mix well, and the TiO obtained in step (1) 2 The nanowires are placed above the precursor in the crucible, and calcined in a muffle furnace by a similar chemical vapor deposition method. The temperature is raised to 550°C at a ...

Embodiment 2

[0035] Example 2 A modified g-C 3 N 4 Quantum dots / TiO 2 Nanowire Photoanodes 2

[0036] A modified g-C 3 N 4 Quantum dots / TiO 2 nanowire photoanodes, the modified g-C 3 N 4 Quantum dots / TiO 2 The preparation method of nanowire photoanode is as follows:

[0037] (1) Place the FTO conductive glass in the growth solution, in which hydrochloric acid, tetrabutyl titanate, and water mixed solution are used as the growth solution, and TiO is synthesized on FTO by solvothermal synthesis at 150°C for 18 hours 2 array of nanowires; the prepared TiO 2 nanowire arrays with N 2 Blow dry for later use;

[0038] (2) Put g-C in the crucible 3 N 4 The precursor urea and barbituric acid, the mass ratio of urea and barbituric acid is 100:1, mix evenly, the TiO obtained in step (1) 2 The nanowires are placed above the precursor in the crucible, and calcined in a muffle furnace by a similar chemical vapor deposition method. The temperature is raised to 550°C at a heating rate of 2.5...

Embodiment 3

[0039] Example 3 A modified g-C 3 N 4 Quantum dots / TiO 2 Nanowire Photoanodes 3

[0040] The modified g-C provided by this embodiment 3 N 4 Quantum dots / TiO 2 The preparation method of the nanowire photoanode is the same as in Example 1, except that the mass ratio of dicyandiamide to barbituric acid in this example is 10:1.

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Abstract

The invention relates to a modified g-C3N4 quantum dot / TiO2 nanowire photo-anode and application thereof. The preparation method of the modified g-C3N4 quantum dot / TiO2 nanowire photo-anode comprises the following steps that 1, conductive glass is placed into growth-promoting liquid, a TiO2 nanowire is synthesized on the conductive glass through a solvent thermal synthesis method, and the TiO2nanowire is blow-dried by utilizing inert gas and for standby application; and 2, a mixture of a g-C3N4 precursor and barbituric acid is placed in a crucible, the TiO2 nanowire obtained in the step 1is placed above the mixture in the crucible, and the modified g-C3N4 quantum dot / TiO2 nanowire photo-anode can be obtained by conducting burning in a muffle furnace through a chemical vapor deposition method, wherein the mass ratio of the g-C3N4 precursor and the barbituric acid is (10-10000):(1-100). The modified g-C3N4 quantum dot / TiO2 nanowire photo-anode has good photocorrosion resistantand photoelectrochemical properties and the stability, and can be used for hydrogen production from water splitting.

Description

technical field [0001] The invention relates to the technical field of material preparation and photocatalytic water splitting, in particular to a modified g-C 3 N 4 Quantum dots / TiO 2 Nanowire photoanodes and their applications. Background technique [0002] With the progress of human society and the development of global industry, the shortage of supply and demand of primary fossil energy such as oil and coal mines is becoming increasingly severe, and the situation of harsh environment is not optimistic. Energy issues and environmental issues have become two major problems on the road to sustainable development for all countries in the world. Looking for A renewable and recyclable clean energy is imminent. The renewable and non-polluting combustion process of hydrogen energy makes it stand out among clean energy. Fossil fuel hydrogen production and electrolytic water hydrogen production are the main methods of hydrogen production at present, but these two technologi...

Claims

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Application Information

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IPC IPC(8): C25B1/04C25B11/06
CPCC25B1/04C25B11/04C25B1/55Y02E60/36
Inventor黄兰艳王新陈志鸿苑明哲周国富
OwnerINT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV