Heterojunction and preparation method thereof

A heterojunction, cofe2o4-w technology, which is applied in the manufacture/processing of magnetic field-controlled resistors and electromagnetic devices, can solve problems such as limitations in the storage field, achieve the effect of simplifying the preparation process and increasing development prospects

Active Publication Date: 2018-04-20
QINGDAO UNIV
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  • Abstract
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Problems solved by technology

[0005] The embodiment of the present invention provides a heterojunction and its preparation method to solve the problem in the prior art that the heterojunction can only realize one of the electroresistance effect or the magnetoresistance effect, and is limited in the storage field

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  • Heterojunction and preparation method thereof
  • Heterojunction and preparation method thereof
  • Heterojunction and preparation method thereof

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Embodiment Construction

[0030] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0031] In order to meet the requirements of smaller device size, higher density, lower energy consumption and longer service life in the field of information storage and communication in the future, the embodiment of the present invention provides a heterojunction, which can realize collector resistance and magnetoresistance effect in o...

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Abstract

The embodiment of the invention discloses a heterojunction. The heterojunction includes an n type doped Si layer and a CoFe2O4-w layer, and an SiO2-v layer which is clamped between the n type doped Silayer and the CoFe2O4-w layer, wherein a second electrode is extracted from the CoFe2O4-w layer; and 0.1<v<0.5, and 0.1<w<0.5. In the heterojunction, electroresistance effect and magneto-resistance effect can be realized in the heterojunction at the same time through adjusting of movement of oxonium ions; under regulation and control of electric fields and magnetic fields, the heterojunction canbe in multiple resistance states, so that the development prospect of the heterojunction can be further increased in multiple fields, such as multi-mode storage and analog neural network.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and devices, in particular to a heterojunction and a preparation method thereof. Background technique [0002] Heterojunction refers to a multilayer film structure composed of different materials. Based on various physical phenomena in heterojunction, it has a wide range of applications in fields such as optoelectronic information. Among them, the use of physical phenomena such as the electroresistance effect and the magnetoresistance effect of the heterojunction makes the heterojunction widely used in the field of information storage. [0003] The electroresistance effect refers to the phenomenon that the resistance of a material can be adjusted by an external electric field to realize its repeated transition between high resistance state and low resistance state. The resistive random access memory (RRAM, Resistive Random Access Memory) based on the electroresistance effect is due...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12
CPCH10N50/01H10N50/10
Inventor 李强李山东徐洁赵国霞
Owner QINGDAO UNIV
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