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Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of large etching aperture and achieve the effect of easy filling

Active Publication Date: 2020-10-02
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention proposes a method for manufacturing a semiconductor device, which can avoid the problem of large etching pore diameter of the organic film layer when etching deep holes in the organic film and the inorganic composite film layer

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

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Embodiment Construction

[0035] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details.

[0036] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numerals designate like elements throughout.

[0037] It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to" or "coupled to" another element or layer, it can be directly on, on, or "coupled to"...

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Abstract

The present invention provides a manufacturing method of a semiconductor device. The method includes the following steps that: a substrate is provided, at least one organic film / inorganic film composite film layer is disposed on the substrate, wherein the inorganic film is located on the organic film, and a mask layer having an opening is formed on the inorganic film; the inorganic film and the organic film are etched twice or more separately with the mask layer adopted as a mask, so that a through hole passing through the inorganic film and the organic film is formed, before the organic filmis etched each time, the inorganic film is etched once, and when the organic film is etched the last time, the organic film is perforated. With the manufacturing method adopted, the problem that the etching aperture of the organic film is large when the through hole is made in the organic film / inorganic film composite film layer can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] System in Package (SiP, System in Package) is to combine multiple active components with different functions, passive components, micro-electromechanical systems (MEMS) and other components such as optical components into one unit to form a single unit that can provide multiple functions. A system or subsystem that allows heterogeneous IC (Integrated Circuit) integration is the best way to package integration. Compared with SOC (system on chip, system on chip), SiP integration has the advantages of relatively simple, shorter design cycle and market cycle, and lower cost, and SiP can realize more complex systems. Compared with the traditional SiP, wafer level system package (waferlevel System in package, WLPSIP) is the process of completing package integration on the wafer, which has the advan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/768
CPCH01L21/31116H01L21/31138H01L21/31144H01L21/76816
Inventor 刘孟彬
Owner NINGBO SEMICON INT CORP