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Materials for photosensitive pattern formation

A photosensitive, patterned technology, applied in luminescent materials, nanotechnology for materials and surface science, nano-optics, etc., can solve problems such as difficulty in ensuring reliability, large light exposure, and inability to increase the concentration of semiconductor quantum dots, etc. Achieving good yield and true manufacturing results

Active Publication Date: 2021-08-17
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Regarding (1) and (2) in the above mounting method, the following problems are pointed out: the amount of light irradiation from the LED to the quantum dots is large, and the heat generation of the quantum dots caused by light irradiation becomes a problem, making it difficult to ensure reliability.
However, in this method, in terms of manufacturing process problems, there are problems that the concentration of semiconductor quantum dots in the final film cannot be increased, and a thick film of about 100 μm is required for wavelength conversion.

Method used

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  • Materials for photosensitive pattern formation
  • Materials for photosensitive pattern formation
  • Materials for photosensitive pattern formation

Examples

Experimental program
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Embodiment

[0201] Hereinafter, although this invention is demonstrated concretely based on an Example, this invention is not limited to these Examples. The compounds used in the examples and comparative examples are shown below.

[0202] (Ligand compound for nanocrystal synthesis)

[0203] C-1: Zinc myristate

[0204] C-2: Dodecylamine

[0205] C-3: Lauric acid

[0206] (compounds that donate ligands)

[0207] D-1: A salt of an anion represented by the following formula (D-1) and a zinc ion

[0208] D-2: A salt of an anion represented by the following formula (D-2) and a zinc ion

[0209]D-3: A salt of an anion represented by the following formula (D-3) and a zinc ion

[0210] D-4: A salt of an anion represented by the following formula (D-4) and a zinc ion

[0211] D-5: A salt of an anion represented by the following formula (D-5) and a zinc ion

[0212] D-6: A salt of an anion represented by the following formula (D-6) and a zinc ion

[0213] d-1: dodecyl succinic acid

[021...

Synthetic example 13

[0247] Synthesis Example 13 was performed in the same manner as in Synthesis Example 5, except that the surface treatment of the core was not performed.

[0248] [InP / ZnSe x S 1-x / Synthesis of ZnS core-shell nanocrystals]

[0249] [Synthesis Example 6 and Synthesis Example 8]

[0250] (Core surface treatment: 0.5 atomic layer ZnSe x S 1-x shell and 2 atomic layer ZnS shell formation)

[0251] Dispersion E having 100 mg of InP cores was taken out of the glove box. The taken out nuclear dispersion solution E and Zn(OLA) 2 3.75mmol / ODE 5g solution was mixed and heated at 60°C under vacuum for 1 hour to completely remove hexane. The flask was returned to a nitrogen atmosphere using nitrogen. Thereafter, the solution was heated to 200° C. and maintained for 30 minutes.

[0252] Thereafter, the reaction solution was heated to 210° C., and 0.3 mmol of trioctylphosphine selenide (TOPSe) / 5 g ODE solution and 0.3 mmol of trioctylphosphine sulfide (TOPS) / 5 g ODE solution were ...

Embodiment 1～ Embodiment 13 and comparative example 1～ comparative example 11

[0275] (ligand exchange)

[0276] In the dispersion of the core-shell nanocrystals shown in Table 3 corresponding to 100 mg of the obtained core-shell nanocrystals, add the ligand-providing compound (D-1) to the compound shown in Table 3 (D-6) and any one of compound (d-1) to compound (d-3), and heated at 70° C. for 1 hour. Thereafter, the dispersion liquid was cooled to room temperature, 12 g of n-butanol was added, the particles were sedimented, and the particles were separated by centrifugation. The supernatant solvent was removed from the settled particles, and the particles were dispersed again in 1.0 g of toluene, and the settling and centrifugation were performed three times using 6 g of n-butanol. Thereafter, the particles were dried by vacuum drying (50° C., 1.0 Torr, 1 hour). The same settling and centrifugation operations were performed three times, and dispersion in toluene was performed to obtain a dispersion liquid of a nanoparticle aggregate. In Comparative E...

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Abstract

An object of the present invention is to provide a nanoparticle assembly suitable for photosensitive pattern forming materials and the like, a method for producing the nanoparticle assembly, a nanoparticle assembly composition, a wavelength conversion layer, and a ligand. The aggregate of nanoparticles of the present invention has a core-shell nanocrystal and a first ligand, and the core-shell nanocrystal has: a core containing a semiconductor substance containing Group 13 elements and Group 15 elements; At least a part of one or more shells containing compounds of group 12 elements and group 16 elements, the first ligand covers at least a part of the core-shell nanocrystal, and the nanoparticle assembly is characterized by In that, in solvents such as 1,2-propylene glycol-1-methyl ether-2-acetate, when excited by light with a wavelength of 456.2 nm having a half-value width of 45 nm, the fluorescence quantum yield is more than 70% and Fluorescence with a wavelength of 510 nm to 650 nm having a fluorescence half-value width of 45 nm or less.

Description

technical field [0001] The present invention relates to a nanoparticle aggregate and its manufacturing method, a nanoparticle aggregate composition, a wavelength conversion layer, and a ligand. Background technique [0002] Displays, lighting, etc. using semiconductor nanocrystalline quantum dots as wavelength conversion elements are emerging. As the mounting method of the wavelength conversion element, there are (1) an on-chip (On Chip) method in which semiconductor nanocrystal quantum dots are mixed in a light-emitting diode (Light-Emitting Diode, LED) sealing material, (2) sealing in a glass capillary ( Glass Capillary) on the edge (On Edge) method in which elements are arranged near the LED at the edge of the panel, (3) Surface (On Surface) method in which semiconductor nanocrystal quantum dots are placed inside the display panel (between the backlight and the diffusion layer) , and the development of components corresponding to each mounting method is being promoted (r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/08B82Y40/00C09K11/56C09K11/70
CPCB82Y40/00C09K11/08C09K11/56C09K11/70B82Y20/00B82Y30/00C09K11/02C09K11/565
Inventor 宫松隆保田庆友神井英行
Owner JSR CORPORATIOON
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