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A kind of titanium dioxide/silicon dioxide one-dimensional photonic crystal and preparation method thereof

A technology of dimensional photonic crystals and titanium dioxide, which is applied in optics, optical components, instruments, etc., can solve the problems of inability to prepare silicon dioxide and titanium dioxide films cheaply and efficiently, and achieve high-efficiency preparation, stable viscosity and good repeatability

Active Publication Date: 2019-09-27
CHANGSHU INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The present invention provides a titanium dioxide / silicon dioxide one-dimensional photonic crystal aiming at the disadvantage that the existing technology cannot prepare silicon dioxide and titanium dioxide films cheaply and efficiently

Method used

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  • A kind of titanium dioxide/silicon dioxide one-dimensional photonic crystal and preparation method thereof
  • A kind of titanium dioxide/silicon dioxide one-dimensional photonic crystal and preparation method thereof
  • A kind of titanium dioxide/silicon dioxide one-dimensional photonic crystal and preparation method thereof

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preparation example Construction

[0050] A kind of preparation method of titanium dioxide / silicon dioxide one-dimensional photonic crystal of the present invention, comprises steps as follows:

[0051] 1) Preparation of titanium dioxide precursor solution

[0052] Mix the metered titanium alkoxide and ethylene glycol methacrylate acetoacetate evenly, and after cooling to room temperature, dissolve the metered deionized water in ethanol to obtain an ethanol solution, and add the ethanol solution under stirring conditions to react; Reaction by-products were removed by rotary evaporation at room temperature and reduced pressure to obtain a titanium dioxide precursor; the prepared titanium dioxide precursor was dissolved in an organic solvent, and a visible light initiator was added to obtain a titanium dioxide precursor solution, which was sealed away from light for use;

[0053] 2) Preparation of silica precursor solution

[0054] Dissolve the polyorganosiloxane and UV curing system in an organic solvent, and s...

Embodiment 1

[0069] Mix tetraethyl titanate and ethylene glycol acetoacetate methacrylate at a molar ratio of 1:0.5, stir at room temperature until transparent and cool to room temperature, then add ethanol solution while stirring to react. The ethanol solution is made of deionized It is prepared by mixing water and ethanol, the deionized water is used in an amount of 2 mol% relative to the alkoxy titanium, and the ethanol is used in an amount of 2% of the mass sum of alkoxy titanium and acetoacetate methacrylate. Vacuum rotary steaming at room temperature for 4 hours, dissolved in tert-butyl methacrylate, adding camphorquinone (1wt%) and ethyl 4-dimethylaminobenzoate (2wt%) to form a 10% titanium dioxide precursor solution , protected from light and sealed for later use.

Embodiment 2

[0071] Mix tetraethyl titanate and ethylene glycol acetoacetate methacrylate at a molar ratio of 1:1, stir at room temperature until transparent and cool to room temperature, then add ethanol solution while stirring to react. The ethanol solution is made of deionized It is prepared by mixing water and ethanol, the deionized water is used in an amount of 5 mol% relative to the alkoxy titanium, and the ethanol is used in an amount of 1% of the mass sum of alkoxy titanium and acetoacetate methacrylate. Vacuum rotary evaporation at room temperature for 4 hours, dissolve in tert-butyl methacrylate, add camphorquinone (1wt%) and ethyl 4-dimethylaminobenzoate (2wt%) to form a 10wt% titanium dioxide precursor solution , protected from light and sealed for later use.

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Abstract

The invention discloses a titanium dioxide / silicon dioxide one-dimensional photonic crystal and a preparation method thereof. The one-dimensional photonic crystal is of a multi-layer film structure composed of a titanium dioxide film and a silicon dioxide film; the central wavelength of a one-dimensional photonic crystal photonic band gap can be adjusted freely between 380 nanometers and 800 nanometers, the reflectivity of the central wavelength of the band gap can reach up to 99% to the highest extent. According to the one-dimensional photonic crystal, titanium-containing precursor film is prepared through spin coating on the substrate, and then thermal treatment is performed to obtain the titanium dioxide film; then, the surface of the titanium dioxide film is subjected to spin coating and thermal treatment to obtain the silicon-containing precursor film to obtain an alternate titanium dioxide / silicon dioxide multi-layer film structure. By changing the chemical structure, the concentration and the spin coating rotating speed of the precursor, films of different thicknesses can be obtained easily, and therefore the central wavelength of the photonic band gap is regulated. The titanium dioxide film, the silicon dioxide film and the titanium dioxide / silicon dioxide one-dimensional photonic crystal can be efficiently prepared with low cost.

Description

technical field [0001] The invention belongs to the technical field of film preparation, and in particular relates to a titanium dioxide / silicon dioxide one-dimensional photonic crystal and a preparation method thereof. Background technique [0002] One-dimensional photonic crystals refer to a type of ordered structure in which the frequency of the medium is periodically distributed along a single direction in space, which is equivalent to a multilayer film material composed of different media. Because photonic crystals can control the propagation of light in them, their applications are very wide. The characteristics of photonic band gap, photonic localization, negative refraction and super-dispersion can be used to design and manufacture high-performance devices of photonic crystals, such as all-angle mirrors, filters, photonic crystal beamsplitters, vertical cavity surface emitting lasers (VCSEL ) in the preparation of key components of the resonator distributed Bragg re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/00
Inventor 胡昕陈欣睿吴文宁程梦怡段正达罗铭左晓兵
Owner CHANGSHU INSTITUTE OF TECHNOLOGY