reaction chamber

Abstract

The invention provides a reaction chamber, which includes a grounded cavity, in which a lower electrode and a lining assembly are arranged, the lining assembly includes a lining ring, the lining ring includes a cylinder and an annular part, and the upper end of the cylinder is in contact with the chamber. The body is connected and grounded through the cavity; the annular part is horizontally arranged at the lower end of the cylinder and surrounds the lower electrode, and the annular part is provided with a plurality of first mesh holes surrounding its circumference. The lining assembly also includes an annular backing plate stacked on the annular portion, and a plurality of second sieve holes are arranged on the annular backing plate, the number of the second sieve holes corresponds to the number of the first sieve holes, And the second sieve holes are set in one-to-one correspondence with the first sieve holes. The reaction chamber provided by the present invention can effectively annihilate the plasma passing through the sieve on the surface of the sieve, thereby avoiding radio frequency leakage.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber. Background technique [0002] In semiconductor etching equipment, the radio frequency energy provided by the radio frequency power supply is usually transmitted to the reaction chamber, and the special gas (such as argon Ar, helium He, nitrogen N2, hydrogen H2, etc.) in the high vacuum state is ionized to generate Plasma of a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, and complex interactions between these active particles and the wafer placed in the reaction chamber and exposed to the plasma environment, Various physical and chemical reactions occur on the surface of the wafer material, so that the surface properties of the wafer material change, thereby completing the etching process of the wafer. [0003] When the reaction chamber is ignited and loaded with high RF power...

AI Technical Summary

Problems solved by technology

[0005] In order to ensure that the backing ring 3 can have a certain elastic deformation when the backing ring 3 is fixed, the depth of the annular portion 32, that is, the depth of the screen hole should not be too large, but the current sieve hole depth cannot effectively reduce the plasma passing through the sieve hole. Obliterated on the surface of the mesh, which easily leads to radio frequency leakage

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