Method for forming three-dimensional memory and three-dimensional memory

A three-dimensional storage and memory technology, applied in the field of semiconductor manufacturing, can solve the problems of polysilicon inversion failure, low electron mobility, high resistance of polysilicon, etc., and achieve the effect of improving programming and erasing performance and high electron mobility

Pending Publication Date: 2018-09-21
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the position or shape of the conductive part is not good, it is easy to cause inversion failure of polysilicon, resulting in high resistance of polysilicon and low electron mobility
This results in reduced channel current which severely impacts the programming / writing performance of 3D memory

Method used

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  • Method for forming three-dimensional memory and three-dimensional memory
  • Method for forming three-dimensional memory and three-dimensional memory
  • Method for forming three-dimensional memory and three-dimensional memory

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Embodiment Construction

[0034] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0036] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The invention relates to a method for forming a three-dimensional memory and the three-dimensional memory. The three-dimensional memory comprises a substrate, a first stack, a second stack, first channel holes located in the first stack, first channel layers located in the first channel holes, second channel holes located in the second stack and aligned with the first channel holes, second channellayers located in the second channel holes, a virtual grid layer located between the first stack and the second stack, and conducting parts located between the first channel layers and the second channel layers, wherein the first stack and the second stack are stacked on the substrate and both comprise spaced grid layers, the conducting parts connect the first channel layers to the second channellayers, and the conducting parts are spaced and electrically isolated from the virtual grid layer in the direction parallel to the substrate.

Description

technical field [0001] The present invention mainly relates to a semiconductor manufacturing method, and in particular to a method for forming a three-dimensional memory and a three-dimensional memory. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, the industry has developed memory devices having a three-dimensional (3D) structure, which improves integration density by three-dimensionally arranging memory cells over a substrate. [0003] In a three-dimensional memory device such as 3D NAND flash memory, a memory array may include a core region having a channel structure. The channel structure is formed in the channel hole vertically penetrating through the stack of the three-dimensional memory device. The channel holes of the stacked layers are usually formed by a single etch. However, in order to increase the storage density and capacity, the number of layers (tier) of the three-dimensional memory continues to increas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11551H01L27/11578H01L27/1157H01L27/11524
CPCH10B41/20H10B41/35H10B43/20H10B43/35
Inventor 肖莉红
Owner YANGTZE MEMORY TECH CO LTD
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