Light emitting element and display equipment
A technology of light-emitting elements and display equipment, which is applied in the direction of electrical components, electric solid-state devices, semiconductor devices, etc., can solve the problems of light-emitting diode pole breakage, product qualification rate decline, and light-emitting diode stress unevenness, so as to achieve stress average and improve product qualification rate, to avoid the effect of breaking
Active Publication Date: 2018-09-25
PLAYNITRIDE
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[0057] The detailed features and advantages of the present invention are described in detail below in the embodiments, the content of which is sufficient for those of ordinary skill in the art to understand the technical content of the present invention and implement it accordingly, and according to the content recorded in this specification, the scope of protection of the claims and the appended FIG. 1 , those of ordinary skill in the art can easily understand the related objects and advantages of the present invention. The following examples further describe the viewpoints of the present invention in detail, but do not limit the protection scope of the claims of the present invention in any viewpoint.
[0058] Please refer to figure 1 , figure 1 It is a cross-sectional view of a light-emitting element according to an embodiment of the present invention. like figure 1As shown, the light emitting element 1 has an epitaxial structure 11 , a first electrode 13 and a second el...
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The invention discloses a light emitting element and display equipment, and the light emitting element is provided with an epitaxial structure, a first electrode, and a second electrode. The epitaxialstructure is provided with a semiconductor layer of a first type, a semiconductor layer of a second type, and a light emitting layer. The light emitting layer is disposed between the semiconductor layer of the first type and the semiconductor layer of the second type. The first electrode is connected with the semiconductor layer of the first type, and at least a part of the first electrode is disposed on a first side surface of the epitaxial structure. The second electrode is connected with the semiconductor layer of the second type, and the second electrode is disposed on a first side surface of the epitaxial structure. A part of the second electrode is disposed between the semiconductor layer of the second type and a part of the first electrode. According to the invention, the stress withstood by the light emitting element is enabled to be uniform as much as possible in a bonding process of the light emitting element and a related backboard, thereby avoiding the breakage of the light emitting element in a manufacturing process, and improving the qualified rate of a product.
Description
technical field [0001] The invention relates to the field of optoelectronics, in particular to a light-emitting element and a display device. Background technique [0002] Light-emitting diodes have high energy conversion efficiency, small size and long service life, and have been widely used in various electronic products, usually as instructions, lighting or for display to provide images. Briefly, a light-emitting diode has an active light-emitting layer and at least two types of doped semiconductor layers. By adjusting the materials used in the active light-emitting layer and the semiconductor layer, manufacturers can manufacture light-emitting diodes with different colors. [0003] In the general manufacturing process, an epitaxial structure including a semiconductor and an active light-emitting layer is first formed, and then the epitaxial structure is etched, and a plurality of conductive parts are provided so that each semiconductor layer can contact the external circ...
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IPC IPC(8): H01L33/38H01L27/15
CPCH01L27/156H01L33/385
Inventor 罗玉云赖育弘林子暘
Owner PLAYNITRIDE