Minority carrier lifetime detection device and detection method

A minority carrier lifetime and detection method technology, applied in the field of semiconductors, can solve the problems of inability to truly reflect the performance of semiconductor materials and low accuracy

Active Publication Date: 2018-10-19
YUNGU GUAN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the traditional test method of minority carrier lifetime measured according to the change trend of elec

Method used

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  • Minority carrier lifetime detection device and detection method
  • Minority carrier lifetime detection device and detection method
  • Minority carrier lifetime detection device and detection method

Examples

Experimental program
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Example Embodiment

[0065] Example 1

[0066] This embodiment provides a method for detecting the lifetime of minority births, such as figure 1 As shown, including the following steps:

[0067] Step S1: Obtain the lifetime value of minority births;

[0068] Step S2, obtain volume distribution characteristic parameters;

[0069] Step S3: Calculate the minority carrier lifetime density and the effective minority carrier lifetime according to the body minority carrier lifetime value and the body distribution characteristic parameter.

[0070] As an implementation of this embodiment, step S1 specifically includes the following steps:

[0071] Step S11: Use an external light source to illuminate the surface of the object to be tested; in this embodiment, the object to be tested is a semiconductor layer, which is selected from but not limited to any one of amorphous silicon material, polysilicon material, metal oxide semiconductor material, etc. The external light source illuminates the surface of the object to...

Example Embodiment

[0104] Example 2

[0105] This embodiment provides a minority birth life detection device, which includes a first acquisition unit 1, a second acquisition unit 2, and a calculation unit 3, wherein:

[0106] The first obtaining unit 1 is used to obtain the lifetime value of the minority carrier;

[0107] In this embodiment, the first acquisition unit 1 includes a first irradiation unit 11 and a first measurement unit 12, wherein:

[0108] The first irradiating unit 11 is used to illuminate the surface of the object to be measured with an external light source. In this embodiment, the object to be measured is a semiconductor layer, which is selected from, but not limited to, any of amorphous silicon material, polysilicon material, metal oxide semiconductor material, etc. One, the external light source is selected from, but not limited to, any one of the ultraviolet light source, laser light source, etc. The selected external light source is determined according to the material of the ob...

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Abstract

The invention relates to the technical field of semiconductors, and discloses a minority carrier lifetime detection method comprising the steps that the body minority carrier lifetime value is acquired; the body distribution characteristic parameters are acquired; and the minority carrier lifetime density and the effective minority carrier lifetime are obtained according to the body minority carrier lifetime value and the body distribution characteristic parameters. The body minority carrier lifetime value is acquired and the semiconductor layer body distribution characteristic parameters arealso acquired, and the minority carrier lifetime density and the effective minority carrier lifetime are obtained through combination of the body minority carrier lifetime value and the body distribution characteristic parameters so that the detection method has high accuracy and can truly reflect the minority carrier lifetime and the performance of the semiconductor layer material.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a minority carrier lifetime detection device and detection method. Background technique [0002] With the vigorous development of the high-tech industry represented by the microelectronics industry, the research, development and application of semiconductor materials have become an important direction of priority development in the industrial field. In the research of semiconductor materials, the lifetime of minority carriers (minority carriers) is directly related to the performance of semiconductor devices, and is one of the important parameters of semiconductor materials. [0003] Most of the existing methods for measuring the minority carrier lifetime are based on the principle of photoconductive decay, including two processes of electron-hole generation by light injection and change of microwave detection signal. The specific measurement principle is: laser injection...

Claims

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Application Information

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IPC IPC(8): G01R31/265
CPCG01R31/2601G01R31/2642G01R31/2656
Inventor 顾维杰
Owner YUNGU GUAN TECH CO LTD
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