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A driving circuit and circuit improvement method for actively suppressing sic MOSFET crosstalk phenomenon

A driving circuit and active suppression technology, which is applied in the direction of high-efficiency power electronic conversion, electrical components, output power conversion devices, etc., can solve the problem that the effective suppression of crosstalk voltage cannot be reduced, and achieve the suppression and increase of crosstalk phenomenon. Gate-source capacitance, the effect of ensuring switching speed

Inactive Publication Date: 2019-07-09
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the existing method for reducing the crosstalk voltage cannot effectively suppress the crosstalk voltage reduction, the present invention proposes a driving circuit and a circuit improvement method for actively suppressing the SiC MOSFET crosstalk phenomenon

Method used

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  • A driving circuit and circuit improvement method for actively suppressing sic MOSFET crosstalk phenomenon
  • A driving circuit and circuit improvement method for actively suppressing sic MOSFET crosstalk phenomenon
  • A driving circuit and circuit improvement method for actively suppressing sic MOSFET crosstalk phenomenon

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Embodiment 1

[0028] A driving circuit improvement method for actively suppressing SiC MOSFET crosstalk phenomenon, the adopted technical scheme is as follows:

[0029] The drive improvement method is aimed at the process of Miller power flowing through the drive circuit. When the crosstalk phenomenon occurs, an additional auxiliary capacitor is actively connected in parallel between the gate and source of the SiC MOSFET by using the conduction of the auxiliary transistor, and at the same time, the auxiliary diode is used to connect the An additional auxiliary resistor is connected in parallel with the drive resistor to suppress crosstalk phenomena if they occur.

[0030]The driving circuit improvement method proposed in this embodiment does not simply reduce the gate driving resistance and increase the gate-source capacitance, but suppresses the crosstalk phenomenon by adding auxiliary components, and based on the above driving circuit improvement method can On the basis of not increasing ...

Embodiment 2

[0032] A drive circuit that actively suppresses the crosstalk phenomenon of SiC MOSFETs, such as figure 1 As shown, the technical solutions adopted are as follows:

[0033] The circuit structure includes an upper tube drive circuit and a lower tube drive circuit; the upper tube drive circuit PWM drive signal, the upper tube drive circuit and the upper tube S 1 ; There is a SiC MOSFET drive circuit gate current limiting resistor R connected in series at one end of the upper tube drive circuit on1 , the SiC MOSFET drive loop gate current limiting resistor R on1 The two ends of the auxiliary diode VD are connected in parallel 1 , and, the auxiliary diode VD 1 with drive loop auxiliary resistor R off1 connected in series with R on1 in parallel; the SiCMOSFET drive circuit gate current limiting resistor R on1 with resistor R c1 in series, the resistor R c1 For parallel connection in PNP transistor VT 1 resistance between base and emitter; at VT 1 An auxiliary capacitor C ...

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Abstract

The invention provides a drive circuit and a circuit improvement method for actively suppressing the SiC MOSFET crosstalk phenomenon, which belong to the technical field of circuit design. The drive circuit and the circuit improvement method aim at the process of the Miller current passing through the drive loop. When the crosstalk phenomenon occurs, the conduction of the auxiliary transistor is used to actively connect an additional auxiliary capacitor in parallel between the gate and source of the SiC MOSFET, and at the same time, the auxiliary Diodes place an additional auxiliary resistor in parallel with the drive resistor to suppress crosstalk phenomena if they occur.

Description

technical field [0001] The invention relates to a drive circuit and a circuit improvement method for actively suppressing SiC MOSFET crosstalk, and belongs to the technical field of circuit design. Background technique [0002] SiC MOSFET has the advantages of high switching frequency, small on-resistance, high temperature and high pressure resistance, etc., which can effectively make up for the limitations of traditional Si power devices in the above aspects. Applying SiC MOSFET to various power electronic devices can reduce the The loss of the switching tube, reducing the weight and volume of the device, thereby effectively improving the efficiency and power density of the power electronic device, is of great significance to the development of power electronics technology. However, compared with Si MOSFET and Si IGBT, SiC MOSFET has a very low turn-on voltage. When SiC MOSFET is applied in a topology with a bridge arm structure, due to the existence of Miller capacitance, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/088
CPCH02M1/088H02M1/0038Y02B70/10
Inventor 王盼宝张临志张晓晨王卫刘鸿鹏徐殿国
Owner HARBIN INST OF TECH
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