Split gate structure of semiconductor device and manufacturing method thereof
A manufacturing method and split gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as gate and source leakage
Active Publication Date: 2021-04-13
CSMC TECH FAB2 CO LTD
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- Abstract
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- Application Information
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Problems solved by technology
[0004] Based on this, it is necessary to provide a method for manufacturing a split gate structure of a semiconductor device in view of the problem that the traditional split gate easily causes leakage between the gate and the source
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[0018] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.
[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0020] The se...
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Abstract
The invention relates to a split gate structure of a semiconductor device and a manufacturing method thereof. The method includes: forming a first groove on the surface of the wafer; forming silicon oxide on the inner surface of the first groove; forming polysilicon in the first groove; anisotropically etching the polysilicon, and forming the polysilicon in the first groove forming gate polysilicon on the sidewall of the gate polysilicon; forming a sidewall oxide layer on the surface of the gate polysilicon; depositing a nitrogen-containing compound into the first trench and etching to form a nitrogen-containing compound sidewall; using the nitrogen-containing compound sidewall as a mask to Etching down to form a second trench; forming an oxide layer on the sidewall of the second trench; filling polysilicon into the first trench and the second trench as source polysilicon. The invention can stabilize the thickness of the sidewall oxide layer, ensure low turn-on voltage, thicken the dielectric thickness between the gate polysilicon and the source polysilicon, and reduce the leakage of the gate-source polysilicon electrode.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a split gate structure of a semiconductor device, and also to a method for manufacturing the split gate structure of a semiconductor device. Background technique [0002] Today's switching power supply operating frequency has been raised to a high frequency above 1MHz. Reduce the feedback capacitance (hereinafter referred to as C GD ) is a major research direction. The solution that has gained attention in recent years is to optimize the single trench gate (trench-gate) of a low-voltage VDMOS (vertical double-diffused metal-oxide-semiconductor field-effect transistor) device with a Shield in a buck-converter (step-down converter). -The split-gate structure of the Plate (shielding plate), which can significantly improve the reliability and switching characteristics of the device from the perspective of device structure and electricity. [0003] figure 1 It is a tradi...
Claims
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IPC IPC(8): H01L21/28H01L29/423
CPCH01L21/28158H01L29/4236H01L29/42364
Inventor 祁树坤
Owner CSMC TECH FAB2 CO LTD