Method for detecting conductivity of damascene structure

Abstract

The invention discloses a method for detecting conductivity of a damascene structure. The method comprises the steps that a semiconductor structure with a device region and a peripheral region are provided, wherein a substrate is included, and a conductive layer and a dielectric layer are sequentially formed on the substrate; step S1, a first deep hole is formed in the device region of the semiconductor structure, and a second deep hole is formed in the peripheral region of the semiconductor structure, and the first deep hole and the second deep hole both penetrate through the dielectric layerto expose the conductive layer; S2, a first groove is formed in the top of the first deep hole, so that a damascene structure is formed; meanwhile, a second groove which is independent from the second deep hole is formed in the peripheral region of the semiconductor structure; S3, the damascene structure, the second deep hole and the second groove are filled with metal, and planarization treatment is carried out; and S4, the damascene structure, the second deep hole and the second groove are scanned through an electron beam, so as to judge the electrical connection situation of the damascenestructure. The method has the beneficial effects that the causes of the structure defect of the damascene structure can be accurately judged.

Description

technical field [0001] The invention relates to the technical field of semiconductor detection, in particular to a method for detecting the conductivity of a damascene structure. Background technique [0002] As a multilayer metal interconnection technology, Damascus structure is widely used in the manufacturing process of integrated circuits. In the prior art, there are two most commonly used ways to form the Damascus structure: groove first and then deep hole or first deep hole and then groove. After filling the metal, it is necessary to detect whether its electrical conduction is conducted, and the detection is usually carried out by means of electron beam scanning. [0003] At present, after the formation of the Damascus structure, its electrical properties are usually detected by filling metal and scanning with electron beams. This method can determine whether the overall conductivity of the Damascus structure is connected, but it is impossible to determine the reason ...

AI Technical Summary

Problems solved by technology

[0003] At present, after the formation of the Damascus structure, its electrical properties are usually detected by filling the metal and scanning the electron beam. This method can determine whether the overall conductivity of the Damascus structure is connected, but it is impossible to determine the reason for the electrical non-conduction. The connection between the hole and the conductive layer, or the connection between the trench and the deep hole, if the electrical test of the Damascene structure fails, the root cause needs to be found out by slicing, which delays the process time

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