A method for detecting the conductivity of Damascus structure

Abstract

The invention discloses a method for detecting the conductivity of a damascene structure, comprising: providing a semiconductor structure having a device region and a peripheral region, including a substrate, and sequentially forming a conductive layer and a dielectric layer on the substrate; step S1, in the semiconductor structure A first deep hole is opened in the device area, and a second deep hole is opened in the peripheral area of ​​the semiconductor structure. Both the first deep hole and the second deep hole pass through the dielectric layer to expose the conductive layer; step S2, in the first deep hole A first trench is opened on the top to form a Damascene structure; meanwhile, a second trench independent of the second deep hole is opened in the peripheral area of ​​the semiconductor structure; step S3, in the Damascene structure, the second deep hole and the second trench Filling with metal and performing planarization treatment; step S4 , scanning the damascene structure, the second deep hole and the second trench with an electron beam to determine the electrical connection of the damascene structure. The beneficial effect lies in that the cause of the structural defect of the Damascus structure can be accurately judged.

Description

technical field [0001] The invention relates to the technical field of semiconductor detection, in particular to a method for detecting the conductivity of a damascene structure. Background technique [0002] As a multilayer metal interconnection technology, Damascus structure is widely used in the manufacturing process of integrated circuits. In the prior art, there are two most commonly used ways to form the Damascene structure: groove first and then deep hole or first deep hole and then groove. After filling the metal, it is necessary to detect whether its electrical conduction is conducted, and the detection is usually carried out by means of electron beam scanning. [0003] At present, after the formation of the Damascus structure, its electrical properties are usually detected by filling metal and scanning with electron beams. This method can determine whether the overall conductivity of the Damascus structure is connected, but it is impossible to determine the reason...

AI Technical Summary

Problems solved by technology

[0003] At present, after the formation of the Damascus structure, its electrical properties are usually detected by filling the metal and scanning the electron beam. This method can determine whether the overall conductivity of the Damascus structure is connected, but it is impossible to determine the reason for the electrical non-conduction. The connection between the hole and the conductive layer, or the connection between the trench and the deep hole, if the electrical test of the Damascene structure fails, the root cause needs to be found out by slicing, which delays the process time

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