Purification method for ethyl orthosilicate
A technology of ethyl orthosilicate and purification method, applied in the field of ethyl orthosilicate purification, can solve the production burden, the quality risk of producing high-purity ethyl orthosilicate, the inability of vaporization system to remove tiny droplets, etc. problems, to achieve the effect of ensuring quality and reducing content
Active Publication Date: 2019-05-03
SUZHOU JINHONG GAS CO LTD
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[0006] In the production of high-purity ethyl orthosilicate, the most commonly used link is vaporization, but the existing vaporization system cannot remove the tiny droplets produced during the vaporization process of raw materials, which leads to the i
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[0034] use figure 1 In the vaporizer shown, 1 is a vaporizer, 2 is an ethyl orthosilicate steam outlet, 3 is a vent pipe, 4 is an ethyl orthosilicate raw material inlet, 5 is a heating medium inlet, 6 is a fiber bed demister, 7 It is a high-frequency welded spiral fin tube heat exchanger, 8 is a level gauge port, 9 is a sewage outlet, and 10 is a heating medium outlet; the distance between the heat exchanger and the first fiber bed demister is 3 meters; The distance between the first fiber bed demister and the second fiber bed demister is 0.5 meters; the distance between the second fiber bed demister and the third fiber bed demister is 0.5 meters; the first fiber bed The thickness of the demister, the second fiber bed demister and the third fiber bed demister are all 0.15 meters.
[0035] TEOS vaporization uses steam as the heat source. The steam enters the high-frequency welded spiral fin tube heat exchanger (7) through the steam inlet (5) on the vaporizer, and fully contacts t...
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The invention provides a purification method for ethyl orthosilicate. The method comprises the following steps: vaporizing the raw material ethyl orthosilicate in a vaporizer, and allowing the vaporized ethyl orthosilicate to sequentially pass through a first fiber bed demister, a second fiber bed demister and a third fiber bed demister which are arranged on the upper part of the vaporizer to obtain an ethyl orthosilicate vapor, wherein the first fiber bed demister has a pore diameter of 1-20 [mu]m, the second fiber bed demister has a pore diameter of 2-10 [mu]m, and the third fiber bed demister has a pore diameter of 0.1-2 [mu]m. Compared with the prior art, the method provided by the invention utilizes three layers of fiber bed demisters with different pore diameters to treat the vaporized ethyl orthosilicate, and can play a role in separating metal ions and oil heavy hydrocarbons, so that the method greatly reduces the content of the heavy hydrocarbons and the metal ions in the ethyl orthosilicate vapor while vaporizing the ethyl orthosilicate, and the method plays a primary purification role, thereby ensuring the quality of the ethyl orthosilicate vapor entering a post-treatment system.
Description
Technical field [0001] The invention belongs to the field of semiconductor technology, and in particular relates to a purification method of tetraethylorthosilicate. Background technique [0002] The methods for forming oxide layers in semiconductor processes mainly include thermal oxidation (for semiconductor materials that can form their own stable oxide layers), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD) and atmospheric chemical vapor deposition ( APCVD), etc., due to the large gas flow required by APCVD and the relatively large number of particles produced by the process, most semiconductor processes are currently rarely used. [0003] When TEOS is used in LPCVD, TEOS evaporates from liquid to gas, decomposes at 700~750℃ and 300mTOR pressure to form silicon dioxide film on the surface of silicon wafer. The deposition rate of silicon dioxide film can be At 50 à / min, the thickness uniformity of the film is less than 3%. Thes...
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Inventor 金向华陈琦峰王新喜
Owner SUZHOU JINHONG GAS CO LTD