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Fin-type field effect transistor and formation method thereof

A fin-type field effect and transistor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems affecting the communication of FinFET devices, and achieve the effect of improving the effect

Inactive Publication Date: 2019-05-21
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, there is a parasitic capacitance (Parasitic Capacitance) between the gate and the metal line. As the critical size of the semiconductor device shrinks, the influence of the parasitic capacitance increases, which in turn affects the Alternating Current (AC) of the FinFET device. performance

Method used

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  • Fin-type field effect transistor and formation method thereof
  • Fin-type field effect transistor and formation method thereof
  • Fin-type field effect transistor and formation method thereof

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Embodiment Construction

[0033] In the existing FinFET technology, there is a parasitic capacitance between the gate and the metal line. As the critical size of the semiconductor device shrinks, the influence of the parasitic capacitance increases, thereby affecting the AC performance of the FinFET device.

[0034] refer to figure 1 and figure 2 , figure 1 is a top view of a fin field effect transistor in the prior art, figure 2 yes figure 1 Schematic diagram of the cross-sectional structure along the cutting line A-A.

[0035] Combine below Figure 1 to Figure 2 Explanation of the FinFET

[0036] The FinFET may include a semiconductor substrate 100 , a fin 110 , a gate 130 and a metal line 150 .

[0037] Wherein, a protruding fin 110 is formed on the surface of the semiconductor substrate 100, the gate 130 straddles the fin 110, the metal line 150 is parallel to the gate 130, and the metal line 150 The electrical contact with at least a part of the fin portion 110 may be, for example, M0.

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Abstract

The invention provides a fin-type field effect transistor and a formation method thereof. The method includes following steps: providing a semiconductor substrate, wherein protruding fin portions areformed on the surface of the semiconductor substrate; forming grid electrodes across the fin portions, wherein the width of the grid electrodes covering the tops of the fin portions is greater than the width of the grid electrodes extending outside the fin portions; and forming a metal line parallel to the grid electrodes, wherein the metal line is in electric contact with at least one portion ofthe fin portions. According to the scheme, the parasitic capacitance between the grid electrodes and the metal line can be reduced, and the AC performance of the fin type field effect transistor can be enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin Field Effect Transistor, FinFET) is an emerging multi-gate device, which generally includes a fin protruding from the surface of the semiconductor substrate, and a gate covering part of the top surface and sidewall of the fin. electrodes, source and drain doped regions in the fins on both sides of the gate, and metal lines parallel to the gate. Wherein, the metal line is in contact with at least a part of the source-drain doped region, for example, it may be a zero-layer metal line (Metal Zero, M0). [0003] In the prior art, there is a parasitic capacitance (Par...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78
Inventor 贺鑫
Owner SEMICON MFG INT (SHANGHAI) CORP