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Forming method of semiconductor structure

A semiconductor and contact technology, applied in the field of metallization process, can solve the problems of affecting the reliability of integrated circuits and increasing contact resistance.

Inactive Publication Date: 2019-05-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Voids in contacts are not desirable as voids increase contact resistance and negatively affect IC reliability

Method used

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  • Forming method of semiconductor structure
  • Forming method of semiconductor structure
  • Forming method of semiconductor structure

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Embodiment Construction

[0041] It is to be understood that different embodiments or examples provided below may implement different configurations of the present invention. The examples of specific components and arrangements are used to simplify the invention and not to limit the invention. For example, the statement that the first component is formed on the second component includes that the two are in direct contact, or there are other additional components interposed between the two instead of direct contact. In addition, numbers may be repeated in various examples of the present invention, but these repetitions are only for simplification and clarity of illustration, and do not mean that units with the same numbers in different embodiments and / or arrangements have the same corresponding relationship.

[0042] In addition, spatial relative terms such as "below", "beneath", "lower", "above", "above", or similar terms may be used to simplify describing the relationship between one element and anoth...

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Abstract

The present disclosure describes a method to a metallization process with improved gap fill properties. The method includes forming a contact opening in an oxide, forming a barrier layer in the contact opening, forming a liner layer on the barrier layer, and forming a first metal layer on the liner layer to partially fill the contact opening. The method further includes forming a second metal layer on the first metal layer to fill the contact opening, where forming the second metal layer includes sputter depositing the second metal layer with a first radio frequency (RF) power and a direct current power, as well as reflowing the second metal layer with a second RF power.

Description

technical field [0001] Embodiments of the present invention relate to metallization processes for improved gap filling. Background technique [0002] When making integrated circuits, filling contact openings becomes increasingly challenging due to the required geometry of the contact openings. As such, it is difficult to deposit metal to fill the contact openings without forming voids or gaps. Voids in contacts are undesirable because voids increase contact resistance and negatively affect IC reliability. Contents of the invention [0003] A method for forming a semiconductor structure provided by an embodiment of the present invention includes: forming a contact opening in the oxide layer; depositing a barrier layer in the contact opening; depositing a liner layer on the barrier layer; depositing a first metal layer on the liner on the pad layer to partially fill the contact opening; and depositing a second metal layer on the first metal layer to fill the opening, where...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/28518H01L21/2855H01L21/76814H01L21/76846H01L21/76855H01L21/76877H01L21/76897H01L23/485H01L23/53209H01L21/28568H01L21/76802H01L21/76843H01L21/76876
Inventor 周典霈林钰庭林圣轩张根育白岳青
Owner TAIWAN SEMICON MFG CO LTD
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